BSS205N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSS205N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 2.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.9 nS
Cossⓘ - Capacitancia de salida: 114 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de BSS205N MOSFET
BSS205N Datasheet (PDF)
bss205n.pdf
BSS205NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =4.5 V 50mDS(on),max GS Enhancement modeV =2.5 V 85GS Super Logic level (2.5V rated)I 2.5 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112Type Package Tape
bss205n.pdf
Product specificationBSS205NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =4.5 V 50mDS(on),max GS Enhancement modeV =2.5 V 85GS Super Logic level (2.5V rated)I 2.5 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-21
bss209pw.pdf
BSS 209PWOptiMOS-P Small-Signal-TransistorProduct SummaryFeaturesV -20 VDS P-ChannelR 550mDS(on),max Enhancement modeI -0.63 AD Super Logic level ( 2.5 V rated) 150C operating temperaturePG-SOT-323 Avalanche rated dv /dt rated Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Halogen-free according to IE
bss209pw2.pdf
BSS 209PWOptiMOS-P Small-Signal-TransistorProduct SummaryFeaturesV -20 VDS P-ChannelR 550mDS(on),max Enhancement modeI -0.63 AD Super Logic level ( 2.5 V rated) 150C operating temperaturePG-SOT-323 Avalanche rated dv /dt rated Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Halogen-free according to IE
Otros transistores... WPMD2010 , WPMD2011 , WPMD2012 , WPMD2013 , WPMD3002 , BSR202N , BSR302N , BSR802N , IRLB4132 , BSS214N , BSS306N , BSS316N , BSS806N , DMG2307L , DMG3401LSN , DMG3407SSN , DMN2041L .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: MPT035N08S | MPT035N08P | MPG150N10S | MPG150N10P | MPG120N06S | MPG120N06P | MPG08N68S | MPG08N68P | MPF10N65 | MDT4N65 | MDT30P10D | MD70N10 | MD50N20 | MD25N50 | MD20N50 | MD100N20
Popular searches
c2166 transistor | 2sd330 | 20n60 | ksa1013 | mje15032g datasheet | 2sc2166 | 2sc5198 | 2sc1971