CS100N08A8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CS100N08A8
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 198 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 59.8 nC
   trⓘ - Tiempo de subida: 22.7 nS
   Cossⓘ - Capacitancia de salida: 408 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
   Paquete / Cubierta: TO220AB

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CS100N08A8 Datasheet (PDF)

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cs100n08a8.pdf

Silicon N-Channel Power MOSFET R CS100N08 A8 General Description VDSS 85 V CS100N08 A8, the silicon N-channel Enhanced ID Silicon limited current 100 A PD(TC=25) 198 W VDMOSFETs, is obtained by advanced Trench Technology RDS(ON)Typ 6.6 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor

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brcs100n06bd.pdf

BRCS100N06BD Rev.A May.-2019 DATA SHEET / Descriptions N TO-263 N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficie

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brcs100n03bd.pdf

BRCS100N03BD Rev.B May.-2022 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features ,, Low gate charge, low crss, fast switching,HF Product. / Applications DC/DC These devices ar

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brcs100n06ra.pdf

BRCS100N06RA Rev.C Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high effic

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brcs100n06dp.pdf

BRCS100N06DP Rev.B Sep.-2019 DATA SHEET / Descriptions N TO-252 N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,, Low gate charge, low crss, fast switching. Halogen-free Product. / Applications DC/DC These devi

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cs100n03 b4.pdf

Silicon N-Channel Power MOSFET R CS100N03 B4 General Description VDSS 30 V CS100N03 B4, the silicon N-channel Enhanced ID 100 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

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cs100n03f b9.pdf

Silicon N-Channel Power MOSFET R CS100N03F B9 General Description VDSS 30 V CS100N03F B9, the silicon N-channel Enhanced ID 100 A PD(TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

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cs100n03 b8.pdf

Silicon N-Channel Power MOSFET R CS100N03 B8 General Description VDSS 30 V CS100N03 B8, the silicon N-channel Enhanced ID 100 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

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cs100n03b8.pdf

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS100N03 B8 General Description VDSS 30 V CS100N03 B8, the silicon N-channel Enhanced ID 100 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transist

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cs100n03b4.pdf

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS100N03 B4 General Description VDSS 30 V CS100N03 B4, the silicon N-channel Enhanced ID 100 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 4.0 m Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transist

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