CS10N80AND Todos los transistores

 6.1. Size:544K  wuxi china
 cs10n80a8d.pdf

Silicon N-Channel Power MOSFET R CS10N80 A8D General Description VDSS 800 V CS10N80 A8D, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 160 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.1. Size:953K  jilin sino
 jcs10n80fc jcs10n80gdc.pdf

N R N-CHANNEL MOSFET JCS10N80C Package MAIN CHARACTERISTICS 10A ID 800 V VDSS Rdson Vgs=10V 1.0 (Max) 71.6nC( Typ.) Qg APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate ch

 7.2. Size:1202K  jilin sino
 jcs10n80f.pdf

N R N-CHANNEL MOSFET JCS10N80C Package MAIN CHARACTERISTICS 10A ID 800 V VDSS Rdson Vgs=10V 1.0 (Max) 71.6nC( Typ.) Qg APPLICATIONS Switched mode power suppliesy Electronic ballast FEATURES Low gate ch

 7.3. Size:304K  crhj
 cs10n80 and.pdf

Silicon N-Channel Power MOSFET R CS10N80 AND General Description VDSS 800 V CS10N80 AND, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 160 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 7.4. Size:546K  crhj
 cs10n80f a9d.pdf

Silicon N-Channel Power MOSFET R CS10N80F A9D General Description VDSS 800 V CS10N80F A9D, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 60 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 7.5. Size:547K  crhj
 cs10n80 a8d.pdf

Silicon N-Channel Power MOSFET R CS10N80 A8D General Description VDSS 800 V CS10N80 A8D, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 160 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 7.6. Size:282K  wuxi china
 cs10n80fa9d.pdf

Silicon N-Channel Power MOSFET R CS10N80F A9D General Description VDSS 800 V CS10N80F A9D, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 60 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.72 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 7.7. Size:804K  convert
 cs10n80f cs10n80p cs10n80v cs10n80w.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS10N80F, CS10N80P,CS10N80V,CS10N80W 800V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS10N80F T