CS5N65FA9R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CS5N65FA9R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 53 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm
   Paquete / Cubierta: TO220F

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CS5N65FA9R Datasheet (PDF)

..1. Size:263K wuxi china
cs5n65fa9r.pdf

Silicon N-Channel Power MOSFET R CS5N65F A9R General Description VDSS 650 V CS5N65F A9R, the silicon N-channel Enhanced ID 5 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

5.1. Size:709K wuxi china
cs5n65fa9h.pdf

Silicon N-Channel Power MOSFET R CS5N65F A9H General Description VDSS 650 V CS5N65F A9H, the silicon N-channel Enhanced ID 5 A PD(TC=25) 32 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.6 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

7.1. Size:581K jilin sino
jcs5n65fb.pdf

N RN-CHANNEL MOSFET JCS5N65FB MAIN CHARACTERISTICS ID 4.0 A VDSS 650 V Rdson-max 2.4 @Vgs=10V Qg-typ 13.3nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURES

7.2. Size:829K crhj
cs5n65f a9h.pdf

Silicon N-Channel Power MOSFET R CS5N65F A9H General Description VDSS 650 V CS5N65F A9H, the silicon N-channel Enhanced VDMOSFETs, ID 5 A PD(TC=25) 32 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.6 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

7.3. Size:441K convert
cs5n65f cs5n65p cs5n65u cs5n65d.pdf

nvertSuzhou Convert Semiconductor Co ., Ltd.CS5N65F, CS5N65P, CS5N65U, CS5N65D650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS5N65F TO-2

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: CS5NJ5305 | SSP5N90A | SGSP475

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