CS12N65FA9R Todos los transistores

 

CS12N65FA9R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS12N65FA9R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: TO220F
 

 Búsqueda de reemplazo de CS12N65FA9R MOSFET

   - Selección ⓘ de transistores por parámetros

 

CS12N65FA9R Datasheet (PDF)

 ..1. Size:269K  wuxi china
 cs12n65fa9r.pdf pdf_icon

CS12N65FA9R

Silicon N-Channel Power MOSFET R CS12N65F A9R General Description VDSS 650 V CS12N65F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.66 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 4.1. Size:222K  wuxi china
 cs12n65fa9h.pdf pdf_icon

CS12N65FA9R

Silicon N-Channel Power MOSFET R CS12N65F A9H VDSS 650 V General Description ID 12 A CS12N65F A9H, the silicon N-channel Enhanced PD (TC=25) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.54 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 6.1. Size:1489K  jilin sino
 jcs12n65fei jcs12n65bei jcs12n65sei jcs12n65cei.pdf pdf_icon

CS12N65FA9R

N RN-CHANNEL MOSFET JCS12N65EI Package MAIN CHARACTERISTICS ID 12A VDSS 650V Rdson-max 0.9 Vgs=10V Qg-Typ 30nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE

 6.2. Size:1410K  jilin sino
 jcs12n65bt jcs12n65st jcs12n65ct jcs12n65ft.pdf pdf_icon

CS12N65FA9R

N R N-CHANNEL MOSFET JCS12N65T Package MAIN CHARACTERISTICS ID 12.0A VDSS 650 V Rdson-max 0.78 @Vgs=10V Qg-typ 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

MOSTRAR MÁS

Otros transistores... VBA3222 , CS12N60A8R , CS6N80ARR-G , VBA2658 , CS12N60FA9R , VBA2333 , CS12N65A8R , CS5N65FA9R , K2611 , CS12N70A8H , CS13N50A8D , VBA2311 , CS13N50A8R , CS13N50FA9D , CS5N60FA9HD , CS13N50FA9R , CS5N60A8H .

 

 
Back to Top

 


 
.