CS5N60FA9HD MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

CS5N60FA9HD datasheet

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Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS5N60F A9HD General Description VDSS 600 V CS5N60F A9HD, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor

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N R N-CHANNEL MOSFET JCS5N60C Package MAIN CHARACTERISTICS ID 4.0 A VDSS 600 V Rdson Vgs=10V 2.5 Qg 9nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES

7.2. Size:976K jilin sino
jcs5n60vb jcs5n60rb jcs5n60cb jcs5n60fb.pdf pdf_icon

N R N-CHANNEL MOSFET JCS5N60B Package MAIN CHARACTERISTICS ID 5.0 A VDSS 600 V 2.4 Rdson Vgs=10V Qg 13.3nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power su

7.3. Size:160K lzg
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