IRF624S Datasheet. Equivalente

 ..1. Size:175K  international rectifier
 irf624s.pdf

 ..2. Size:1773K  international rectifier
 irf624spbf.pdf

PD- 95985 IRF624SPbF Lead-Free 12/21/04 Document Number 91030 www.vishay.com 1 IRF624SPbF Document Number 91030 www.vishay.com 2 IRF624SPbF Document Number 91030 www.vishay.com 3 IRF624SPbF Document Number 91030 www.vishay.com 4 IRF624SPbF Document Number 91030 www.vishay.com 5 IRF624SPbF Document Number 91030 www.vishay.com 6 IRF624SPbF Peak Diode Recovery

 ..3. Size:197K  vishay
 irf624spbf sihf624s.pdf

IRF624S, SiHF624S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 Surface Mount RDS(on) ( )VGS = 10 V 1.1 Available in Tape and Reel Qg (Max.) (nC) 14 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.7 Fast Switching Qgd (nC) 7.8 Ease of Paralleling Simple Drive R

 8.1. Size:300K  1
 irf624 irf625.pdf

 8.2. Size:875K  1
 irfs624b irf624b.pdf

November 2001 IRF624B/IRFS624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13.5 nC) planar, DMOS technology. Low Crss ( typical 9.5 pF) This advanced technology has been especially tailored to

 8.3. Size:275K  international rectifier
 irf624.pdf

PD - 95626 IRF624PbF Lead-Free 8/3/04 Document Number 91029 www.vishay.com 1 IRF624PbF Document Number 91029 www.vishay.com 2 IRF624PbF Document Number 91029 www.vishay.com 3 IRF624PbF Document Number 91029 www.vishay.com 4 IRF624PbF Document Number 91029 www.vishay.com 5 IRF624PbF Document Number 91029 www.vishay.com 6 IRF624PbF Document Number 91029 www.

 8.4. Size:874K  fairchild semi
 irf624b irfs624b.pdf

November 2001 IRF624B/IRFS624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13.5 nC) planar, DMOS technology. Low Crss ( typical 9.5 pF) This advanced technology has been especially tailored to

 8.5. Size:944K  samsung
 irf624a.pdf

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Low RDS(ON) 0.742 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val

 8.6. Size:196K  vishay
 irf624 sihf624.pdf

IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.1 RoHS* Fast Switching Qg (Max.) (nC) 14 COMPLIANT Ease of Paralleling Qgs (nC) 2.7 Simple Drive Requirements Qgd (nC) 7.8 Configuration Single Compliant to RoHS Directive 2002/95/EC D DE

 8.7. Size:196K  vishay
 irf624pbf sihf624.pdf

IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.1 RoHS* Fast Switching Qg (Max.) (nC) 14 COMPLIANT Ease of Paralleling Qgs (nC) 2.7 Simple Drive Requirements Qgd (nC) 7.8 Configuration Single Compliant to RoHS Directive 2002/95/EC D DE