IRF624S
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF624S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 250
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 4.4
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4
V
Qgⓘ - Carga de la puerta: 14(max)
nC
trⓘ - Tiempo de subida: 13
nS
Cossⓘ - Capacitancia
de salida: 77
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.1
Ohm
Paquete / Cubierta:
TO263
Búsqueda de reemplazo de MOSFET IRF624S
IRF624S
Datasheet (PDF)
..2. Size:1773K international rectifier
irf624spbf.pdf 
PD- 95985IRF624SPbF Lead-Free12/21/04Document Number: 91030 www.vishay.com1IRF624SPbFDocument Number: 91030 www.vishay.com2IRF624SPbFDocument Number: 91030 www.vishay.com3IRF624SPbFDocument Number: 91030 www.vishay.com4IRF624SPbFDocument Number: 91030 www.vishay.com5IRF624SPbFDocument Number: 91030 www.vishay.com6IRF624SPbFPeak Diode Recovery
..3. Size:197K vishay
irf624spbf sihf624s.pdf
IRF624S, SiHF624SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 250 Surface MountRDS(on) ()VGS = 10 V 1.1 Available in Tape and ReelQg (Max.) (nC) 14 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.7 Fast SwitchingQgd (nC) 7.8 Ease of Paralleling Simple Drive R
8.2. Size:875K 1
irfs624b irf624b.pdf
November 2001IRF624B/IRFS624B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been especially tailored to
8.3. Size:275K international rectifier
irf624.pdf
PD - 95626IRF624PbF Lead-Free8/3/04Document Number: 91029 www.vishay.com1IRF624PbFDocument Number: 91029 www.vishay.com2IRF624PbFDocument Number: 91029 www.vishay.com3IRF624PbFDocument Number: 91029 www.vishay.com4IRF624PbFDocument Number: 91029 www.vishay.com5IRF624PbFDocument Number: 91029 www.vishay.com6IRF624PbFDocument Number: 91029 www.
8.4. Size:874K fairchild semi
irf624b irfs624b.pdf
November 2001IRF624B/IRFS624B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been especially tailored to
8.5. Size:944K samsung
irf624a.pdf
Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Low RDS(ON) : 0.742 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val
8.6. Size:196K vishay
irf624 sihf624.pdf
IRF624, SiHF624Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.1RoHS* Fast SwitchingQg (Max.) (nC) 14COMPLIANT Ease of ParallelingQgs (nC) 2.7 Simple Drive RequirementsQgd (nC) 7.8Configuration Single Compliant to RoHS Directive 2002/95/ECDDE
8.7. Size:196K vishay
irf624pbf sihf624.pdf
IRF624, SiHF624Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 250Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.1RoHS* Fast SwitchingQg (Max.) (nC) 14COMPLIANT Ease of ParallelingQgs (nC) 2.7 Simple Drive RequirementsQgd (nC) 7.8Configuration Single Compliant to RoHS Directive 2002/95/ECDDE
Otros transistores... IRF621
, IRF6215
, IRF6215L
, IRF6215S
, IRF622
, IRF623
, IRF624
, IRF624A
, 2N7000
, IRF625
, IRF630
, IRF630A
, IRF630FI
, IRF630S
, IRF631
, IRF632
, IRF633
.
