IRF625 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF625
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 40 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 3.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 24 nS
Cossⓘ - Capacitancia de salida: 150 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de IRF625 MOSFET
- Selecciónⓘ de transistores por parámetros
IRF625 datasheet
9.1. Size:875K 1
irfs624b irf624b.pdf 
November 2001 IRF624B/IRFS624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13.5 nC) planar, DMOS technology. Low Crss ( typical 9.5 pF) This advanced technology has been especially tailored to
9.3. Size:124K international rectifier
irf6216pbf.pdf
SMPS MOSFET PD - 95293 IRF6216PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Reset Switch for Active Clamp Reset DC-DC converters -150V 0.240W@VGS =-10V -2.2A l Lead-Free Benefits l Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 Effective COSS to Simplify Design (See 6 S D App. Note AN1001) 4
9.4. Size:299K international rectifier
irf6218spbf.pdf
PD - 96181 IRF6218SPbF SMPS MOSFET IRF6218LPbF HEXFET Power MOSFET Applications l Reset Switch for Active Clamp VDSS RDS(on) max ID Reset DC-DC converters 150m @VGS = -10V -27A -150V Benefits D l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See G App. Note AN1001) D2Pak TO-262 l Fully Cha
9.5. Size:182K international rectifier
irf6215s.pdf
PD - 91643 IRF6215S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF6215S) VDSS = -150V Low-profile through-hole (IRF6215L) 175 C Operating Temperature RDS(on) = 0.29 Fast Switching G P-Channel ID = -13A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
9.6. Size:270K international rectifier
auirf6215.pdf
PD - 97564 AUTOMOTIVE GRADE AUIRF6215 Features l Advanced Planar Technology HEXFET Power MOSFET l Low On-Resistance l P-Channel D V(BR)DSS -150V l Dynamic dv/dt Rating RDS(on) max. 0.29 l 175 C Operating Temperature G l Fast Switching ID -13A S l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified D D
9.8. Size:275K international rectifier
irf6218l.pdf
PD - 95863A IRF6218S SMPS MOSFET IRF6218L HEXFET Power MOSFET Applications l Reset Switch for Active Clamp VDSS RDS(on) max ID Reset DC-DC converters 150m @VGS = -10V -27A -150V Benefits D l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See G App. Note AN1001) TO-262 D2Pak l Fully Charact
9.9. Size:162K international rectifier
irf620spbf.pdf
IRF620S, SiHF620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition Surface Mount RDS(on) ( )VGS = 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 14 Dynamic dV/dt Rating Qgs (nC) 3.0 Repetitive Avalanche Rated Qgd (nC) 7.9 Fast Switching Simple Drive Requirements Configuratio
9.10. Size:820K international rectifier
auirf6215s.pdf
AUTOMOTIVE GRADE AUIRF6215S Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D VDSS -150V l P-Channel l Dynamic dV/dT Rating G RDS(on) max. 0.29 l 175 C Operating Temperature S ID -13A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified * Description S Spec
9.12. Size:177K international rectifier
irf6215pbf.pdf
PD - 94817 IRF6215PbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = -150V Fast Switching P-Channel RDS(on) = 0.29 Fully Avalanche Rated G Lead-Free ID = -13A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance pe
9.13. Size:886K international rectifier
irf620.pdf
PD - 94870 IRF620PbF Lead-Free 12/5/03 Document Number 91027 www.vishay.com 1 IRF620PbF Document Number 91027 www.vishay.com 2 IRF620PbF Document Number 91027 www.vishay.com 3 IRF620PbF Document Number 91027 www.vishay.com 4 IRF620PbF Document Number 91027 www.vishay.com 5 IRF620PbF Document Number 91027 www.vishay.com 6 IRF620PbF TO-220AB Package Outline
9.14. Size:103K international rectifier
irf6216.pdf
PD - 94297 IRF6216 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID Reset Switch for Active Clamp Reset -150V 0.240 @VGS =-10V -2.2A DC-DC converters Benefits Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including 3 Effective COSS to Simplify Design (See 6 S D App. Note AN1001
9.15. Size:1773K international rectifier
irf624spbf.pdf
PD- 95985 IRF624SPbF Lead-Free 12/21/04 Document Number 91030 www.vishay.com 1 IRF624SPbF Document Number 91030 www.vishay.com 2 IRF624SPbF Document Number 91030 www.vishay.com 3 IRF624SPbF Document Number 91030 www.vishay.com 4 IRF624SPbF Document Number 91030 www.vishay.com 5 IRF624SPbF Document Number 91030 www.vishay.com 6 IRF624SPbF Peak Diode Recovery
9.16. Size:992K international rectifier
irf6215spbf irf6215lpbf.pdf
PD - 95132 IRF6215S/LPbF Lead-Free www.irf.com 1 4/21/05 IRF6215S/LPbF 2 www.irf.com IRF6215S/LPbF www.irf.com 3 IRF6215S/LPbF 4 www.irf.com IRF6215S/LPbF www.irf.com 5 IRF6215S/LPbF 6 www.irf.com IRF6215S/LPbF www.irf.com 7 IRF6215S/LPbF D2Pak Package Outline D2Pak Part Marking Information THIS IS AN IRF530S WIT H PART NUMBER LOT CODE 8024 INTERNAT IONAL AS S
9.17. Size:125K international rectifier
irf6215.pdf
PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -150V 175 C Operating Temperature Fast Switching RDS(on) = 0.29 P-Channel G Fully Avalanche Rated ID = -13A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area
9.18. Size:229K international rectifier
auirf6218l auirf6218s.pdf
AUTOMOTIVE GRADE AUIRF6218S AUIRF6218L Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS -150V l P-Channel l Dynamic dV/dT Rating RDS(on) max 150m l 175 C Operating Temperature G l Fast Switching S ID -27A l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified * D
9.19. Size:193K international rectifier
irf6216pbf-1.pdf
IRF6216PbF-1 HEXFET Power MOSFET VDS -150 V A 1 8 S D RDS(on) max 0.24 2 7 S D (@V = -10V) GS Qg (typical) 33 nC 3 6 S D ID 4 5 -2.2 A G D (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environme
9.20. Size:275K international rectifier
irf624.pdf
PD - 95626 IRF624PbF Lead-Free 8/3/04 Document Number 91029 www.vishay.com 1 IRF624PbF Document Number 91029 www.vishay.com 2 IRF624PbF Document Number 91029 www.vishay.com 3 IRF624PbF Document Number 91029 www.vishay.com 4 IRF624PbF Document Number 91029 www.vishay.com 5 IRF624PbF Document Number 91029 www.vishay.com 6 IRF624PbF Document Number 91029 www.
9.21. Size:247K international rectifier
irf6201pbf.pdf
PD - 97500A IRF6201PbF HEXFET Power MOSFET VDS 20 V RDS(on) max 2.45 m (@VGS = 4.5V) RDS(on) max 2.75 m (@VGS = 2.5V) Qg (typical) 130 nC SO-8 ID 27 A (@TA = 25 C) Applications OR-ing or hot-swap MOSFET Battery operated DC motor inverter MOSFET System/Load switch Features and Benefits Features Benefits Low RDSon ( 2.45m @ Vgs = 4.5V) Lower
9.23. Size:202K international rectifier
irf620pbf.pdf
IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.80 RoHS* Fast Switching Qg (Max.) (nC) 14 COMPLIANT Ease of Paralleling Qgs (nC) 3.0 Qgd (nC) 7.9 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D
9.24. Size:105K international rectifier
irf6217.pdf
PD - 94359 IRF6217 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID Reset Switch for Active Clamp Reset -150V 2.4 @VGS =-10V -0.7A DC to DC converters Benefits Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including 3 6 Effective COSS to Simplify Design (See S D App. Note AN100
9.25. Size:194K international rectifier
irf6217pbf-1.pdf
IRF6217PbF-1 HEXFET Power MOSFET VDS -150 V A 1 8 S D RDS(on) max 2.4 2 7 S D (@V = -10V) GS Qg (typical) 6 nC 3 6 S D ID 4 5 -0.7 A G D (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environment
9.26. Size:136K international rectifier
irf6218pbf.pdf
PD -95441 IRF6218PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Reset Switch for Active Clamp 150m @VGS = -10V -27A -150V Reset DC-DC converters l Lead-Free D Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including G Effective COSS to Simplify Design (See App. Note AN1001) TO-220AB S l Fully Charac
9.27. Size:125K international rectifier
irf6217pbf.pdf
PD - 95252 IRF6217PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Reset Switch for Active Clamp Reset -150V 2.4W@VGS =-10V -0.7A DC to DC converters l Lead-Free Benefits l Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 Effective COSS to Simplify Design (See S D App. Note AN1001)
9.28. Size:992K international rectifier
irf6215lpbf irf6215spbf.pdf
PD - 95132 IRF6215S/LPbF Lead-Free www.irf.com 1 4/21/05 IRF6215S/LPbF 2 www.irf.com IRF6215S/LPbF www.irf.com 3 IRF6215S/LPbF 4 www.irf.com IRF6215S/LPbF www.irf.com 5 IRF6215S/LPbF 6 www.irf.com IRF6215S/LPbF www.irf.com 7 IRF6215S/LPbF D2Pak Package Outline D2Pak Part Marking Information THIS IS AN IRF530S WIT H PART NUMBER LOT CODE 8024 INTERNAT IONAL AS S
9.29. Size:184K st
irf620.pdf
IRF620 IRF620FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRF620 200 V
9.31. Size:874K fairchild semi
irf624b irfs624b.pdf
November 2001 IRF624B/IRFS624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13.5 nC) planar, DMOS technology. Low Crss ( typical 9.5 pF) This advanced technology has been especially tailored to
9.33. Size:944K samsung
irf624a.pdf
Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Low RDS(ON) 0.742 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val
9.34. Size:931K samsung
irf620a.pdf
Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.626 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value
9.35. Size:196K vishay
irf624 sihf624.pdf
IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.1 RoHS* Fast Switching Qg (Max.) (nC) 14 COMPLIANT Ease of Paralleling Qgs (nC) 2.7 Simple Drive Requirements Qgd (nC) 7.8 Configuration Single Compliant to RoHS Directive 2002/95/EC D DE
9.36. Size:196K vishay
irf624pbf sihf624.pdf
IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.1 RoHS* Fast Switching Qg (Max.) (nC) 14 COMPLIANT Ease of Paralleling Qgs (nC) 2.7 Simple Drive Requirements Qgd (nC) 7.8 Configuration Single Compliant to RoHS Directive 2002/95/EC D DE
9.37. Size:197K vishay
irf624spbf sihf624s.pdf
IRF624S, SiHF624S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 Surface Mount RDS(on) ( )VGS = 10 V 1.1 Available in Tape and Reel Qg (Max.) (nC) 14 Dynamic dV/dt Rating Repetitive Avalanche Rated Qgs (nC) 2.7 Fast Switching Qgd (nC) 7.8 Ease of Paralleling Simple Drive R
9.38. Size:152K vishay
irf620 sihf620.pdf
IRF620, SiHF620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.80 RoHS* Fast Switching Qg (Max.) (nC) 14 COMPLIANT Ease of Paralleling Qgs (nC) 3.0 Qgd (nC) 7.9 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D
9.39. Size:454K infineon
irf6218spbf.pdf
SMPS MOSFET IRF6218SPbF HEXFET Power MOSFET Applications VDSS RDS(on) (max) ID Reset Switch for Active Clamp Reset DC-DC converters - 150V 150m @ VGS = -10V -27A Benefits D Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) S Fully Characterized
9.40. Size:2157K infineon
auirf6215s.pdf
AUTOMOTIVE GRADE AUIRF6215S HEXFET Power MOSFET Features Advanced Planar Technology VDSS -150V Low On-Resistance P-Channel MOSFET RDS(on) max. 0.29 Dynamic dv/dt Rating 175 C Operating Temperature ID -13A Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automo
9.41. Size:240K inchange semiconductor
irf6218.pdf
isc P-Channel MOSFET Transistor IRF6218,IIRF6218 FEATURES Static drain-source on-resistance RDS(on) 0.15 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Reset switch for active clamp Reset DC-DC converters Low gate to drain charge to reduce switching losses ABSOLUTE MAXIMUM
Otros transistores... IRF6215
, IRF6215L
, IRF6215S
, IRF622
, IRF623
, IRF624
, IRF624A
, IRF624S
, NCEP15T14
, IRF630
, IRF630A
, IRF630FI
, IRF630S
, IRF631
, IRF632
, IRF633
, IRF634
.
History: APQ14SN65AH
| G16
| FDB035AN06F085
| IRLR8726
| IRF630FI
| IRF624
| IRF624A
