CS24N50_ANHD Todos los transistores

 

CS24N50_ANHD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS24N50_ANHD

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 230 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 24 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 117 nS

Conductancia de drenaje-sustrato (Cd): 410 pF

Resistencia drenaje-fuente RDS(on): 0.26 Ohm

Empaquetado / Estuche: TO3PN

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CS24N50_ANHD Datasheet (PDF)

1.1. cs24n50 anhd.pdf Size:678K _crhj

CS24N50_ANHD
CS24N50_ANHD

Silicon N-Channel Power MOSFET R ○ CS24N50 ANHD General Description: VDSS 500 V CS24N50 ANHD, the silicon N-channel Enhanced ID 24 A PD(TC=25℃) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.18 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

3.1. cs24n50.pdf Size:124K _update_mosfet

CS24N50_ANHD

CS24N50 型 N 沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 300 W 线性降低系数 0.40 W/℃ ID (VGS=10V,TC=25℃) 24 A 极 限 IDM 96 值 VGS ±20 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 0.42 ℃/W 性 BVDSS VGS=0V,ID=0.25mA 500 V RDS on) VGS=10V,ID=12A 0.23 Ω ( VGS th) VDS=VGS,ID=4mA 2.

 5.1. cs24n40a8.pdf Size:344K _update_mosfet

CS24N50_ANHD
CS24N50_ANHD

Silicon N-Channel Power MOSFET R ○ CS24N40 A8 General Description: VDSS 400 V CS24N40 A8, the silicon N-channel Enhanced ID 24 A PD (TC=25℃) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.14 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

5.2. cs24n40 a8.pdf Size:344K _crhj

CS24N50_ANHD
CS24N50_ANHD

Silicon N-Channel Power MOSFET R ○ CS24N40 A8 General Description: VDSS 400 V CS24N40 A8, the silicon N-channel Enhanced ID 24 A PD (TC=25℃) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.14 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 5.3. cs24n40f a9h.pdf Size:221K _crhj

CS24N50_ANHD
CS24N50_ANHD

Silicon N-Channel Power MOSFET R ○ CS24N40F A9H General Description: VDSS 400 V CS24N40F A9H, the silicon N-channel Enhanced ID 24 A PD (TC=25℃) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.14 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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