SI3477DV-T1-GE3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SI3477DV-T1-GE3www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 m

New ProductSi3477DVVishay SiliconixP-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0175 at VGS = - 4.5 V - 8 TrenchFET Power MOSFET- 12 0.023 at VGS = - 2.5 V - 8 28.3 nC PWM Optimized0.033 at VGS = - 1.8 V - 8 100 % Rg Tested Compliant to RoHS Direct

Si3473DVVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen free According to IEC61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition 0.023 at VGS = - 4.5 V - 7.9 TrenchFET Power MOSFET: 1.8 V Rated0.029 at VGS = - 2.5 V - 7.0- 12 22 Ultra-Low On-Resistance0.041 at VGS = - 1.8 V - 5.9 Compliant to RoHs Directive 2002/95/

Si3475DVVishay SiliconixP-Channel 200-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition1.61 at VGS = - 10 V - 0.95 TrenchFET Power MOSFET- 200 8 nC 100 % Rg and UIS Tested 1.65 at VGS = - 6 V - 0.93 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Active Clamp Cir

Si3471DVVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.031 at VGS = - 4.5 V - 6.8 TrenchFET Power MOSFET: 1.8 V Rated 0.040 at VGS = - 2.5 V - 12 - 6.0 Compliant to RoHS Directive 2002/95/EC0.053 at VGS = - 1.8 V - 5.2APPLICATIONS Load Switch

Si3476DVVishay SiliconixN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) Material categorization:0.093 at VGS = 10 V 4.6For definitions of compliance please see0.108 at VGS = 6 V 80 4.3 2.6www.vishay.com/doc?999120.126 at VGS = 4.5 V 4APPLICATIONS Load Swit

Si3474DVVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested Material categorization: 0.126 at VGS = 10 V 3.8For definitions of compliance please see0.147 at VGS = 6 V 100 3.5 2.9 nCwww.vishay.com/doc?999120.189 at VGS = 4.5 V 3.1APPL

New ProductSi3473CDVVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.022 at VGS = - 4.5 V - 8 TrenchFET Power MOSFET PWM Optimized0.028 at VGS = - 2.5 V - 8 26 nC- 12 Compliant to RoHS Directive 2002/95/EC0.036 at VGS = - 1.8 V - 8APPLIC

Si3471CDVVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.027 at VGS = - 4.5 V - 8 TrenchFET Power MOSFET PWM Optimized0.036 at VGS = - 2.5 V - 8 20 nC- 12 Compliant to RoHS Directive 2002/95/EC0.048 at VGS = - 1.8 V - 7.5APPLICATIONS

New ProductSi3473CDVVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.022 at VGS = - 4.5 V - 8 TrenchFET Power MOSFET PWM Optimized0.028 at VGS = - 2.5 V - 8 26 nC- 12 Compliant to RoHS Directive 2002/95/EC0.036 at VGS = - 1.8 V - 8APPLIC

SMD Type MOSFETP-Channel MOSFETSI3475DV (KI3475DV)( )SOT-23-6 Unit: mm0.4+0.1-0.16 5 4 Features VDS (V) =-200V ID =-0.95 A (VGS =-10V)S RDS(ON) 1.61 (VGS =-10V) 1 2 3+0.020.15 -0.02+0.01 RDS(ON) 1.65 (VGS =-6V)-0.01+0.2-0.1G 1 Drain 4 Source2 Drain 5 DrainD3 Gate 6 Drain Absolute Maximum Ratings Ta = 25Para