CS3N40A4H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS3N40A4H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 21 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.4 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de CS3N40A4H MOSFET
CS3N40A4H Datasheet (PDF)
cs3n40a3h.pdf
Silicon N-Channel Power MOSFET R CS3N40 A3H General Description VDSS 400 V CS3N40 A3H, the silicon N-channel Enhanced ID 3 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs3n40 a3h.pdf
Silicon N-Channel Power MOSFET R CS3N40 A3H General Description VDSS 400 V CS3N40 A3H, the silicon N-channel Enhanced ID 3 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs3n40 a4h.pdf
Silicon N-Channel Power MOSFET R CS3N40 A4H General Description VDSS 400 V CS3N40 A4H, the silicon N-channel Enhanced ID 3 A PD (TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs3n40 a23.pdf
Silicon N-Channel Power MOSFET R CS3N40 A23 General Description VDSS 400 V CS3N40 A23, the silicon N-channel Enhanced ID 2 A PD (TC=25) 2.5 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)TYP 2.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
Otros transistores... CS45N06A4 , SUD25N06-45L , CS3410B4 , CS3410BR , RSS065N06 , RSS090P03 , CS3N40A23 , CS3N40A3H , BS170 , CS3N50B3 , ISL9N306AS3S , CS3N50B4 , VB2703K , VB3222 , VB4290 , VB5222 , CS3N90A3H1-G .
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