CS3N90A3H1-G Todos los transistores

 

CS3N90A3H1-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS3N90A3H1-G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 32 nS
   Cossⓘ - Capacitancia de salida: 44 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5.5 Ohm
   Paquete / Cubierta: TO251
 

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CS3N90A3H1-G Datasheet (PDF)

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CS3N90A3H1-G

Silicon N-Channel Power MOSFET R CS3N90 A3H1-G General Description VDSS 900 V CS3N90 A3H1-G, the silicon N-channel Enhanced ID 3 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

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 cs3n90a3h.pdf pdf_icon

CS3N90A3H1-G

Silicon N-Channel Power MOSFET R CS3N90 A3H General Description VDSS 900 V CS3N90 A3H, the silicon N-channel Enhanced ID 3 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

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 cs3n90a4h.pdf pdf_icon

CS3N90A3H1-G

Silicon N-Channel Power MOSFET R CS3N90 A4H General Description VDSS 900 V CS3N90 A4H, the silicon N-channel Enhanced ID 3 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

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CS3N90A3H1-G

Silicon N-Channel Power MOSFET R CS3N90 A8 General Description VDSS 900 V CS3N90 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 3 A PD(TC=25) 80 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 5.0 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

MOSTRAR MÁS

Otros transistores... CS3N40A4H , CS3N50B3 , ISL9N306AS3S , CS3N50B4 , VB2703K , VB3222 , VB4290 , VB5222 , SI2302 , RTR025N05T , RYU002N05T306 , CS3N80ARH , NTD20N06T4 , NTD24N06LT4G , NTD25P03LG , NDS9945-NL , NCE6602 .

 

 
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