CS2N65A4 Todos los transistores

 

CS2N65A4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS2N65A4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 9 nC
   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 31 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

CS2N65A4 Datasheet (PDF)

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CS2N65A4

Silicon N-Channel Power MOSFET R CS2N65 A4 General Description VDSS 650 V CS2N65 A4, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 3.9 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

 0.1. Size:543K  wuxi china
 cs2n65a4hy.pdf pdf_icon

CS2N65A4

Silicon N-Channel Power MOSFET R CS2N65 A4HY General Description VDSS 650 V CS2N65 A4HY, the silicon N-channel Enhanced ID 2 A PD(TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.1. Size:857K  blue-rocket-elect
 brcs2n65aa.pdf pdf_icon

CS2N65A4

BRCS2N65AA Rev.A Sep.-2018 DATA SHEET / Descriptions TO-262 N MOS N-CHANNEL MOSFET in a TO-262 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficie

 7.2. Size:242K  wuxi china
 cs2n65a3hy.pdf pdf_icon

CS2N65A4

Silicon N-Channel Power MOSFET R CS2N65 A3HY General Description VDSS 650 V CS2N65 A3HY, the silicon N-channel Enhanced ID 2 A PD (TC=25) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 3.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

MOSTRAR MÁS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: NCE65N460F | RQK0301FG

 

 
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