CS4N70A3HD-G Todos los transistores

 

CS4N70A3HD-G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS4N70A3HD-G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 70 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm

Encapsulados: TO251

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CS4N70A3HD-G datasheet

 7.1. Size:930K  wuxi china
cs4n70arhd.pdf pdf_icon

CS4N70A3HD-G

Silicon N-Channel Power MOSFET R CS4N70 ARHD General Description VDSS 700 V CS4N70 ARHD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 8.1. Size:2205K  jilin sino
jcs4n70v jcs4n70r jcs4n70mf jcs4n70s jcs4n70b jcs4n70c jcs4n70f.pdf pdf_icon

CS4N70A3HD-G

N R N-CHANNEL MOSFET JCS4N70C Package MAIN CHARACTERISTICS ID 4.0 A VDSS 700 V Rdson-max 2.8 @Vgs=10V Qg-typ 16nC APPLICATIONS High frequency switching mode power supply UPS Electronic ballast UPS T0-251N-S2 FEA

 8.2. Size:2742K  jilin sino
jcs4n70v jcs4n70r jcs4n70mf jcs4n70c jcs4n70f jcs4n70b jcs4n70s.pdf pdf_icon

CS4N70A3HD-G

N R N-CHANNEL MOSFET JCS4N70C Package MAIN CHARACTERISTICS ID 4.0 A 700 V VDSS Rdson-max 2.8 Vgs=10V 16nC Qg-Typ APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

 8.3. Size:428K  crhj
cs4n70 a4hd.pdf pdf_icon

CS4N70A3HD-G

Silicon N-Channel Power MOSFET R CS4N70 A4HD General Description VDSS 700 V CS4N70 A4HD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 70 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.5 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

Otros transistores... CS4N65A3R , NTZD3155CT2G , NUD3160LT , CS4N65A4R , NCE6005AS , NCE603S , CS4N65FA9R , CS4N70A3D , 20N60 , CS4N70A4HD , PSMN035-150 , RFD12N06RLES , CS4N80A3HD , CS50N20ANH , CS540A3 , CS540A4 , IRLTS2242TR .

History: S10H18RP | CS2N70A3R1-G

 

 

 


History: S10H18RP | CS2N70A3R1-G

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