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RFD12N06RLES MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RFD12N06RLES
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.031 Ohm
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

RFD12N06RLES Datasheet (PDF)

 ..1. Size:835K  cn vbsemi
 rfd12n06rles.pdf pdf_icon

RFD12N06RLES

RFD12N06RLESwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

 0.1. Size:215K  fairchild semi
 rfd12n06rle rfd12n06rlesm rfp12n06rle.pdf pdf_icon

RFD12N06RLES

RFD12N06RLE, RFD12N06RLESM,RFP12N06RLEData Sheet January 200217A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.063, VGS = 10VDRAIN DRAIN (FLANGE)GATE - rDS(ON) = 0.071, VGS = 5V (FLANGE)GATE Simulation ModelsSOURCE- Temperature Compensate

 0.2. Size:863K  onsemi
 rfd12n06rlesm.pdf pdf_icon

RFD12N06RLES

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:276K  international rectifier
 irfd123.pdf pdf_icon

RFD12N06RLES

PD - 97015IRFD12306/09/05Document Number: 90161 www.vishay.com1IRFD123Document Number: 90161 www.vishay.com2IRFD123Document Number: 90161 www.vishay.com3IRFD123Document Number: 90161 www.vishay.com4IRFD123Document Number: 90161 www.vishay.com5IRFD123Document Number: 90161 www.vishay.com6IRFD123Peak Diode Recovery dv/dt Test Circuit+Circuit Lay

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SI2202 | SIHF10N40D

 

 
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