NCE40P05Y Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE40P05Y 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 150 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
Encapsulados: SOT23
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NCE40P05Y datasheet
nce40p05y.pdf
Pb Free Product http //www.ncepower.com NCE40P05Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05Y uses advanced trench technology and D design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. G General Features VDS =-40V,ID =-5.3A S RDS(ON)
nce40p05y.pdf
NCE40P05Y www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-2
nce40p05s.pdf
Pb Free Product http //www.ncepower.com NCE40P05S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-5.3A RDS(ON)
nce40p06s.pdf
Pb Free Product http //www.ncepower.com NCE40P06S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-6A RDS(ON)
Otros transistores... CS540AR, VB1240, CS5N20A3, CS5N20A4, CS5N20FA9, NCE4688, NCE3400A, NCE3404, IRFB4115, CS16N65FA9H, SI9424DY-T1-E3, SI9430DY-T1, SI9433DY, SI9435BDY-T1-E3, SI9435DY-T1, CS60N04C4, NDT452AP-NL
Parámetros del MOSFET. Cómo se afectan entre sí.
History: SI7668ADP | GWM13S65YRY | JMTG080P03A | IPB140N08S4-04 | HMS105N10D | DH100P28B | BUZ104L
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