SI9430DY-T1
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SI9430DY-T1
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.5
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 20
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12
V
|Id|ⓘ - Corriente continua de drenaje: 8
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 1700
nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018
Ohm
Paquete / Cubierta:
SO8
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SI9430DY-T1
Datasheet (PDF)
..1. Size:1458K cn vbsemi
si9430dy-t1.pdf 
SI9430DY-T1www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Typic
9.7. Size:1809K kexin
si9435dy.pdf
SMD Type MOSFETP-Channel MOSFETSI9435DYSOP-8 Features VDS (V) =-30V ID =-5.3 A (VGS =-10V)1.50 0.15 RDS(ON) 50m (VGS =-10V) RDS(ON) 80m (VGS =-4.5V) Fast switching speed1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 Gate5 46 37 28 1 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-
9.8. Size:1669K kexin
si9435bdy.pdf
SMD Type ICSMD Type MOSFETP-Channel Enhancement MOSFET SI9435BDY (KI9435BDY)SOP-8 Features VDSS = -30V ID = -5.7A (VGS = -10V) RDS(ON) = 42 m @ VGS = -10 V1.50 0.15 RDS(ON) = 70 m @ VGS = -4.5 VSS D1 8GS D2 7S D3 6G D4 5DP-Channel MOSFET Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltag
9.9. Size:3139K cn szxunrui
si9435.pdf
SOP-8 Plastic-Encapsulate MOSFETS SI9435P-Channel Enhancement Mode Power MOSFET SOP-8Description SD1 8The SI9435 uses advanced trench technology to provide S D2 7excellent RDS(ON), low gate charge and operation with gate SD3 6G D4 5voltages as low as 4.5V. Top ViewEquivalent Cir cuitGeneral Features S VDS = -30V = -4.2A RDS(ON)
9.10. Size:846K cn vbsemi
si9435dy-t1.pdf
SI9435DY-T1www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DT
9.11. Size:886K cn vbsemi
si9433bdy.pdf
SI9433BDYwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Typical
9.12. Size:806K cn vbsemi
si9435bdy-t1-e3.pdf
SI9435BDY-T1-E3www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5
9.13. Size:886K cn vbsemi
si9433dy.pdf
SI9433DYwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definitiona0.015 at VGS = - 4.5 V TrenchFET Power MOSFET- 13a 100 % Rg Tested0.026 at VGS = - 2.5 V - 20 20 nC- 10 Built in ESD Protection with Zener Diode0.065 at VGS = - 1.8 V - 8 Typical
Otros transistores... CS5N20A4
, CS5N20FA9
, NCE4688
, NCE3400A
, NCE3404
, NCE40P05Y
, CS16N65FA9H
, SI9424DY-T1-E3
, 2SK3878
, SI9433DY
, SI9435BDY-T1-E3
, SI9435DY-T1
, CS60N04C4
, NDT452AP-NL
, CS16N06AE-G
, CS12N06AE-G
, RQK0301FG
.
History: KIA2404A-247
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