CS12N06AE-G Todos los transistores

 ..1. Size:1653K  wuxi china
 cs12n06ae-g.pdf

Silicon N-Channel Power Trench MOSFET R CS12N06 AE-G General Description VDSS 60 V CS12N06 AE-G, the silicon N-channel Enhanced ID Silicon limited current 12 A PD(TC=25 ) 3.2 W VDMOSFETs, is obtained by the high density Trenchtechnology RDS(ON)Typ 10.5 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The

 9.1. Size:1140K  1
 jcs12n65t.pdf

N R N-CHANNEL MOSFET JCS12N65T Package MAIN CHARACTERISTICS ID 12 A VDSS 650 V Rdson @Vgs=10V 0.78 Qg 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA

 9.2. Size:1489K  jilin sino
 jcs12n65fei jcs12n65bei jcs12n65sei jcs12n65cei.pdf

N R N-CHANNEL MOSFET JCS12N65EI Package MAIN CHARACTERISTICS ID 12A VDSS 650V Rdson-max 0.9 Vgs=10V Qg-Typ 30nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE

 9.3. Size:1410K  jilin sino
 jcs12n65bt jcs12n65st jcs12n65ct jcs12n65ft.pdf

N R N-CHANNEL MOSFET JCS12N65T Package MAIN CHARACTERISTICS ID 12.0A VDSS 650 V Rdson-max 0.78 @Vgs=10V Qg-typ 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

 9.4. Size:543K  jilin sino
 jcs12n65f.pdf

 9.5. Size:1072K  jilin sino
 jcs12n60t.pdf

 9.6. Size:1207K  jilin sino
 jcs12n60ct jcs12n60ft jcs12n60st jcs12n60bt.pdf

N R N-CHANNEL MOSFET JCS12N60T Package MAIN CHARACTERISTICS ID 12.0A VDSS 600 V Rdson-max 0.65 @Vgs=10V Qg 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L

 9.7. Size:1239K  blue-rocket-elect
 brcs12n65bd.pdf

BRCS12N65BD Rev.A Aug.-2018 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , , Low gate charge, Low Crss , Fast switching. / Applications UPS High efficiency switch mode pow

 9.8. Size:222K  crhj
 cs12n70 a8h.pdf

Silicon N-Channel Power MOSFET R CS12N70 A8H VDSS 700 V General Description ID 12 A CS12N70 A8H, the silicon N-channel Enhanced PD (TC=25 ) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.64 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 9.9. Size:266K  crhj
 cs12n60 a8r.pdf

Silicon N-Channel Power MOSFET R CS12N60 A8R General Description VDSS 600 V CS12N60 A8R, the silicon N-channel Enhanced ID 12 A PD(TC=25 ) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 9.10. Size:270K  crhj
 cs12n60f a9r.pdf

Silicon N-Channel Power MOSFET R CS12N60F A9R General Description VDSS 600 V CS12N60F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25 ) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 9.11. Size:269K  crhj
 cs12n65f a9r.pdf

Silicon N-Channel Power MOSFET R CS12N65F A9R General Description VDSS 650 V CS12N65F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25 ) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.66 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 9.12. Size:354K  crhj
 cs12n60f a9hd.pdf

Silicon N-Channel Power MOSFET R CS12N60F A9HD VDSS 600 V General Description ID 12 A CS12N60F A9HD, the silicon N-channel Enhanced PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

 9.13. Size:271K  crhj
 cs12n65 a8r.pdf

Silicon N-Channel Power MOSFET R CS12N65 A8R General Description VDSS 650 V CS12N65 A8R, the silicon N-channel Enhanced ID 12 A PD(TC=25 ) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.66 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 9.14. Size:342K  crhj
 cs12n65f a9h.pdf

Silicon N-Channel Power MOSFET R CS12N65F A9H VDSS 650 V General Description ID 12 A CS12N65F A9H, the silicon N-channel Enhanced PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.54 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 9.15. Size:352K  crhj
 cs12n60 a8h.pdf

Silicon N-Channel Power MOSFET R CS12N60 A8H VDSS 600 V General Description ID 12 A CS12N60 A8H, the silicon N-channel Enhanced PD (TC=25 ) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 9.16. Size:346K  crhj
 cs12n65 a8h.pdf

Silicon N-Channel Power MOSFET R CS12N65 A8H VDSS 650 V General Description ID 12 A CS12N65 A8H, the silicon N-channel Enhanced PD (TC=25 ) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.54 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 9.17. Size:356K  crhj
 cs12n60 a8hd.pdf

Silicon N-Channel Power MOSFET R CS12N60 A8HD VDSS 600 V XGeneral Description ID 12 A CS12N60 A8HD, the silicon N-channel Enhanced PD (TC=25 ) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 9.18. Size:252K  crhj
 cs12n60f a9h.pdf

Silicon N-Channel Power MOSFET R CS12N60F A9H VDSS 600 V General Description ID 12 A CS12N60F A9H, the silicon N-channel Enhanced PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 9.19. Size:124K  china
 cs12n10.pdf

CS12N10 N PD TC=25 75 W 0.6 W/ ID VGS=10V,TC=25 12 A IDM 30 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 1.25 /W BVDSS VGS=0V,ID=0.25mA 100 V RDS on VGS=10V,ID=45A 0.18 VGS th VDS=VGS,ID=0.25mA

 9.20. Size:252K  foshan
 cs12n60f.pdf

 9.21. Size:253K  lzg
 cs12n60.pdf

BR12N60(CS12N60) N-CHANNEL MOSFET/N MOS PFC Purpose These devices are well suited for high efficient switched mode power supplies,active power factor correction,electronic lamp ballast based on half bridge topology. , ,

 9.22. Size:417K  semihow
 hcs12nk65v.pdf

Apr 2014 BVDSS = 650 V RDS(on) typ = 0.34 HCS12NK65V ID = 12 A 650V N-Channel Super Junction MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 32 nC (Typ.) Extended Safe Ope

 9.23. Size:270K  wuxi china
 cs12n60fa9r.pdf

Silicon N-Channel Power MOSFET R CS12N60F A9R General Description VDSS 600 V CS12N60F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25 ) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 9.24. Size:222K  wuxi china
 cs12n65fa9h.pdf

Silicon N-Channel Power MOSFET R CS12N65F A9H VDSS 650 V General Description ID 12 A CS12N65F A9H, the silicon N-channel Enhanced PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.54 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 9.25. Size:356K  wuxi china
 cs12n60a8hd.pdf

Silicon N-Channel Power MOSFET R CS12N60 A8HD VDSS 600 V XGeneral Description ID 12 A CS12N60 A8HD, the silicon N-channel Enhanced PD (TC=25 ) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 9.26. Size:192K  wuxi china
 cs12n60fa9h.pdf

Silicon N-Channel Power MOSFET R CS12N60F A9H VDSS 600 V General Description ID 12 A CS12N60F A9H, the silicon N-channel Enhanced PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 9.27. Size:346K  wuxi china
 cs12n65a8h.pdf

Silicon N-Channel Power MOSFET R CS12N65 A8H VDSS 650 V General Description ID 12 A CS12N65 A8H, the silicon N-channel Enhanced PD (TC=25 ) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.54 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 9.28. Size:269K  wuxi china
 cs12n65fa9r.pdf

Silicon N-Channel Power MOSFET R CS12N65F A9R General Description VDSS 650 V CS12N65F A9R, the silicon N-channel Enhanced ID 12 A PD(TC=25 ) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.66 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 9.29. Size:354K  wuxi china
 cs12n60fa9hd.pdf

Silicon N-Channel Power MOSFET R CS12N60F A9HD VDSS 600 V General Description ID 12 A CS12N60F A9HD, the silicon N-channel Enhanced PD (TC=25 ) 55 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

 9.30. Size:352K  wuxi china
 cs12n60a8h.pdf

Silicon N-Channel Power MOSFET R CS12N60 A8H VDSS 600 V General Description ID 12 A CS12N60 A8H, the silicon N-channel Enhanced PD (TC=25 ) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.5 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 9.31. Size:449K  convert
 cs12n80f cs12n80v.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS12N80F, CS12N80V 800V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS12N80F TO-220F CS12N80F C

 9.32. Size:412K  convert
 cs12n65f cs12n65p.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS12N65F,CS12N65P 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS12N65F TO-220F CS12N65F CS

 9.33. Size:370K  convert
 cs12n65ff.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS12N65FF 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS12N65FF TO-220F CS12N65FF Absolute

 9.34. Size:750K  convert
 cs12n60f cs12n60p.pdf

CS12N60F,CS12N60P nvert Suzhou Convert Semiconductor Co ., Ltd. 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS12N60F TO-220F CS12N60F CS