RFD16N05LSM9A Todos los transistores

 ..1. Size:806K  cn vbsemi
 rfd16n05lsm9a.pdf

RFD16N05LSM9A www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwi

 3.1. Size:691K  onsemi
 rfd16n05lsm.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.1. Size:161K  fairchild semi
 rfd16n05l-lsm.pdf

RFD16N05L, RFD16N05LSM Data Sheet December 2003 16A, 50V, 0.047 Ohm, Logic Level, Features N-Channel Power MOSFETs 16A, 50V These are N-Channel logic level power MOSFETs rDS(ON) = 0.047 manufactured using the MegaFET process. This process, UIS SOA Rating Curve (Single Pulse) which uses feature sizes approaching those of LSI integrated circuits gives optimum utilizati

 6.1. Size:228K  fairchild semi
 rfd16n05-sm.pdf

RFD16N05, RFD16N05SM Data Sheet November 2003 16A, 50V, 0.047 Ohm, N-Channel Power Features MOSFETs 16A, 50V The RFD16N05 and RFD16N05SM N-channel power rDS(ON) = 0.047 MOSFETs are manufactured using the MegaFET process. Temperature Compensating PSPICE Model This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilizati