RFD16N05LSM9A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RFD16N05LSM9A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 11 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.031 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET RFD16N05LSM9A

RFD16N05LSM9A Datasheet (PDF)

..1. Size:806K cn vbsemi
rfd16n05lsm9a.pdf

RFD16N05LSM9Awww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwi

3.1. Size:691K onsemi
rfd16n05lsm.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

5.1. Size:161K fairchild semi
rfd16n05l-lsm.pdf

RFD16N05L, RFD16N05LSMData Sheet December 200316A, 50V, 0.047 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 16A, 50VThese are N-Channel logic level power MOSFETs rDS(ON) = 0.047manufactured using the MegaFET process. This process, UIS SOA Rating Curve (Single Pulse)which uses feature sizes approaching those of LSI integrated circuits gives optimum utilizati

6.1. Size:228K fairchild semi
rfd16n05-sm.pdf

RFD16N05, RFD16N05SMData Sheet November 200316A, 50V, 0.047 Ohm, N-Channel Power FeaturesMOSFETs 16A, 50VThe RFD16N05 and RFD16N05SM N-channel power rDS(ON) = 0.047MOSFETs are manufactured using the MegaFET process. Temperature Compensating PSPICE ModelThis process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilizati

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Liste

Recientemente añadidas las descripciónes de los transistores: