IRF636A Todos los transistores

Advanced Power MOSFET FEATURES BVDSS = 275 V Avalanche Rugged Technology RDS(on) = 0.50 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.1 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current 10 A (Max.) @ VDS = 275V Lower RDS(ON) 0.380 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu

Advanced Power MOSFET FEATURES BVDSS = 275 V Avalanche Rugged Technology RDS(on) = 0.50 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.1 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current 10 A (Max.) @ VDS = 275V Lower RDS(ON) 0.380 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu

IRF630B/IRFS630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 22 nC) planar, DMOS technology. Low Crss ( typical 22 pF) This advanced technology has been especially tailored to Fast switchin

PD - 95047A IRF630NPbF IRF630NSPbF l Advanced Process Technology IRF630NLPbF l Dynamic dv/dt Rating HEXFET Power MOSFET l 175 C Operating Temperature l Fast Switching D VDSS = 200V l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements RDS(on) = 0.30 G l Lead-Free Description ID = 9.3A Fifth Generation HEXFET Power MOSFETs from S International Rec

PD - 94975 IRF634PbF Lead-Free 02/03/04 Document Number 91034 www.vishay.com 1 IRF634PbF Document Number 91034 www.vishay.com 2 IRF634PbF Document Number 91034 www.vishay.com 3 IRF634PbF Document Number 91034 www.vishay.com 4 IRF634PbF Document Number 91034 www.vishay.com 5 IRF634PbF Document Number 91034 www.vishay.com 6 IRF634PbF TO-220AB Package Outline

PD - 95541 IRF634SPbF Lead-Free SMD-220 7/21/04 Document Number 91035 www.vishay.com 1 IRF634SPbF Document Number 91035 www.vishay.com 2 IRF634SPbF Document Number 91035 www.vishay.com 3 IRF634SPbF Document Number 91035 www.vishay.com 4 IRF634SPbF Document Number 91035 www.vishay.com 5 IRF634SPbF Document Number 91035 www.vishay.com 6 IRF634SPbF Peak Diode

PD - 95047A IRF630NPbF IRF630NSPbF l Advanced Process Technology IRF630NLPbF l Dynamic dv/dt Rating HEXFET Power MOSFET l 175 C Operating Temperature l Fast Switching D VDSS = 200V l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements RDS(on) = 0.30 G l Lead-Free Description ID = 9.3A Fifth Generation HEXFET Power MOSFETs from S International Rec

PD - 95118 IRF630SPbF Lead-Free 3/17/04 Document Number 91032 www.vishay.com 1 IRF630SPbF Document Number 91032 www.vishay.com 2 IRF630SPbF Document Number 91032 www.vishay.com 3 IRF630SPbF Document Number 91032 www.vishay.com 4 IRF630SPbF Document Number 91032 www.vishay.com 5 IRF630SPbF Document Number 91032 www.vishay.com 6 IRF630SPbF D2Pak Package Outli

PD - 95342 IRF634NPbF IRF634NSPbF l Advanced Process Technology IRF634NLPbF l Dynamic dv/dt Rating HEXFET Power MOSFET l 175 C Operating Temperature l Fast Switching D l Fully Avalanche Rated VDSS = 250V l Ease of Paralleling l Simple Drive Requirements RDS(on) = 0.435 G l Lead-Free Description ID = 8.0A Fifth Generation HEXFET Power MOSFETs from International S Rect

PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology HEXFET Power MOSFET Dynamic dv/dt Rating 175 C Operating Temperature D VDSS = 200V Fast Switching Fully Avalanche Rated RDS(on) = 0.30 Ease of Paralleling G Simple Drive Requirements Description ID = 9.3A Fifth Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced proces

PD - 94310 IRF634N IRF634NS IRF634NL Advanced Process Technology Dynamic dv/dt Rating HEXFET Power MOSFET 175 C Operating Temperature D Fast Switching VDSS = 250V Fully Avalanche Rated Ease of Paralleling RDS(on) = 0.435 Simple Drive Requirements G Description Fifth Generation HEXFET Power MOSFETs from International ID = 8.0A Rectifier utilize advanced processin

PD- 95916 IRF630PbF Lead-Free 9/27/04 Document Number 91031 www.vishay.com 1 IRF630PbF Document Number 91031 www.vishay.com 2 IRF630PbF Document Number 91031 www.vishay.com 3 IRF630PbF Document Number 91031 www.vishay.com 4 IRF630PbF Document Number 91031 www.vishay.com 5 IRF630PbF Document Number 91031 www.vishay.com 6 IRF630PbF Peak Diode Recovery dv/dt T

Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF630, IRF630S FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 9 A g RDS(ON) 400 m s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology

IRF630 IRF630FP N - CHANNEL 200V - 0.35 - 9A - TO-220/FP MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID IRF630 200 V

www.DataSheet4U.com IRF630M IRF630MFP N-CHANNEL 200V - 0.35 - 9A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID IRF630M 200 V

IRF630M IRF630MFP N-CHANNEL 200V - 0.35 - 9A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID IRF630M 200 V

IRF630S N - CHANNEL 200V - 0.35 - 9A- D2PAK MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID IRF630S 200 V

IRF630 IRF630FP N-channel 200V - 0.35 - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET General features Type VDSS RDS(on) ID IRF630 200V

December 2013 IRF634B N-Channel BFET MOSFET 250 V, 8.1 A, 450 m Description Features These N-Channel enhancement mode power field effect 8.1 A, 250 V, RDS(on) = 450 m @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low Gate Charge (Typ. 29 nC) planar, DMOS technology. This advanced technology has Low Crss (Typ. 20 pF) been especially tailored to

IRF630, RF1S630SM Data Sheet January 2002 9A, 200V, 0.400 Ohm, N-Channel Power Features MOSFETs 9A, 200V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.400 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanc

IRF630B/IRFS630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 22 nC) planar, DMOS technology. Low Crss ( typical 22 pF) This advanced technology has been especially tailored to Fast switchin

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.333 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.45 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Lower RDS(ON) 0.327 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V

IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.45 RoHS* Fast Switching Qg (Max.) (nC) 41 COMPLIANT Ease of Paralleling Qgs (nC) 6.5 Qgd (nC) 22 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition RDS(on) ( )VGS = 10 V 0.40 Surface Mount Qg (Max.) (nC) 43 Available in Tape and Reel Qgs (nC) 7.0 Dynamic dV/dt Rating Qgd (nC) 23 Repetitive Avalanche Rated Configuration Single Fast Switching Ease of Paralleli

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 Dynamic dV/dt Rating Available RDS(on) ( )VGS = 10 V 0.435 175 C Operating Temperature RoHS* Fast Switching COMPLIANT Qg (Max.) (nC) 34 Fully Avalanche Rated Qgs (nC) 6.5 Ease of Paralleling Qgd (nC

IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.40 RoHS* Fast Switching Qg (Max.) (nC) 43 COMPLIANT Ease of Paralleling Qgs (nC) 7.0 Qgd (nC) 23 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 Available Dynamic dV/dt Rating RoHS* RDS(on) ( )VGS = 10 V 0.435 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 34 Fast Switching Qgs (nC) 6.5 Fully Avalanche Rated Ease of Paralleling Qgd (nC

IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.45 RoHS* Fast Switching Qg (Max.) (nC) 41 COMPLIANT Ease of Paralleling Qgs (nC) 6.5 Qgd (nC) 22 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 Surface Mount RDS(on) ( )VGS = 10 V 0.45 Available in Tape and Reel Qg (Max.) (nC) 41 Dynamic dV/dt Rating Qgs (nC) 6.5 Repetitive Avalanche Rated Qgd (nC) 22 Fast Switching Ease of Paralleling Configuration Sing

IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.40 Fast Switching RoHS* Qg (Max.) (nC) 43 COMPLIANT Ease of Paralleling Qgs (nC) 7.0 Qgd (nC) 23 Simple Drive Requirements Configuration Single Lead (Pb)-free Available D DESCRIPTION TO-

IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 Surface Mount RDS(on) ( )VGS = 10 V 0.45 Available in Tape and Reel Qg (Max.) (nC) 41 Dynamic dV/dt Rating Qgs (nC) 6.5 Repetitive Avalanche Rated Qgd (nC) 22 Fast Switching Ease of Paralleling Configuration Sing

IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition RDS(on) ( )VGS = 10 V 0.40 Surface Mount Qg (Max.) (nC) 43 Available in Tape and Reel Qgs (nC) 7.0 Dynamic dV/dt Rating Qgd (nC) 23 Repetitive Avalanche Rated Configuration Single Fast Switching Ease of Paralleli

Spec. No. MOS200401 HI-SINCERITY Issued Date 2004.04.01 Revised Date 2005.04.22 MICROELECTRONICS CORP. Page No. 1/6 HIRF630 Series Pin Assignment HIRF630 / HIRF630F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source This power MOSFET is designed for low voltage, high speed power switching applicati

IRF630 RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 200V Fast Switching Characteristic RDS(ON) 0.4 Simple Drive Requirement ID 9.0A G S Description G TO-220(P) D APEC MOSFET provide the power designer with the best combination of fast S switching , lower on-resistance and reasonable cost.

RoHS IRF630 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (9A, 200Volts) DESCRIPTION The Nell IRF630 are N-channel enhancement mode silicon gate power field effect transistors. D They are designed, tested and guaranteed to withstand D level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliab

SMD Type MOSFET N-Channel MOSFET IRF630S (KRF630S) Features VDS (V) = 200V ID = 9 A (VGS = 10V) RDS(ON) 400m (VGS = 10V) Fast switching Low thermal resistance d g s Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 200 V Drain-Gate Voltage VDG 200 Gate-Source Voltage VGS 20 Ta = 25 9 Cont

IRF630MFP www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.265 f = 60 Hz) RoHS Qg (Max.) (nC) 16 Sink to Lead Creepage Distance = 4.8 mm 175 C Operating Temperature Qgs (nC) 5 Dynamic dV/dt Rating Qgd (nC) 8 Low Thermal Resist

IRF630P www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY DT-Trench Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.270 at VGS =10V 10 200 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch TO-220AB D G S N-Channel MOSFET G D S Top View ABSOLUTE MAXIMUM RATI

IRF630S www.VBsemi.tw Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition RDS(on) ( )VGS = 10 V 0.30 Surface Mount Qg (Max.) (nC) 43 Available in Tape and Reel Qgs (nC) 7.0 Dynamic dV/dt Rating Qgd (nC) 23 Repetitive Avalanche Rated Configuration Single Fast Switching Ease of Paralleling Simpl

MOSFET INCHANGE IRF630 N-channel mosfet transistor Features 1 2 3 With TO-220 package Low on-state and thermal resistance Fast switching VDSS=200V; RDS(ON) 0.4 ;ID=9A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VDSS Drain-source voltage (VGS=0) 200 V VGS Gate-source voltage 20 V ID Drain Current-continuous@ TC

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630B DESCRIPTION Drain Current ID= 9A@ TC=25 Drain Source Voltage- VDSS= 200V(Min) Static Drain-Source On-Resistance RDS(on) = 0.4 (Max) Fast Switching Speed APPLICATIONS Desinged for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC conve

MOSFET INCHANGE IRF634 N-channel mosfet transistor Features 1 2 3 With TO-220 package Simple drive requirements Fast switching VDSS=250V; RDS(ON) 0.45 ;ID=8.1A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VDSS Drain-source voltage (VGS=0) 250 V VGS Gate-source voltage 20 V ID Drain Current-continuous@ TC=25

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION Drain Current ID=9A@ TC=25 Drain Source Voltage- VDSS= 200V(Min) Static Drain-Source On-Resistance RDS(on) = 0.4 (Max) Fast Switching Speed Low Drive Requirement APPLICATIONS This device is n-channel, enhancement mode, power MOSFET designed espec

Isc N-Channel MOSFET Transistor IRF630NL FEATURES With TO-262 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF630NSTRRPBF DESCRIPTION Drain Current I =9.3A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) DS(on) Fast Switching Speed Low Drive Requirement Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This de

Isc N-Channel MOSFET Transistor IRF630NS FEATURES With TO-263( D PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

isc N-Channel MOSFET Transistor IRF630N IIRF630N FEATURES Static drain-source on-resistance RDS(on) 0.3 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Efficient and reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T

MOSFET INCHANGE IRF630F N-channel mosfet transistor Features With TO-220F package 1 2 3 Low on-stateand thermal resistance Fast switching VDSS=200V; RDS(ON) 0.4 ;ID=9A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VDSS Drain-source voltage (VGS=0) 200 V VGS Gate-source voltage 20 V ID Drain Current-continuous@ TC