CS6N60A8H Todos los transistores

 

CS6N60A8H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CS6N60A8H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 85 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 75 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.7 Ohm

Encapsulados: TO220AB

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CS6N60A8H datasheet

 7.1. Size:319K  wuxi china
 cs6n60a3ty.pdf pdf_icon

CS6N60A8H

Silicon N-Channel Power MOSFET R CS6N60 A3TY General Description VDSS 600 V CS6N60 A3TY, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.2. Size:422K  wuxi china
 cs6n60a4ty.pdf pdf_icon

CS6N60A8H

Silicon N-Channel Power MOSFET R CS6N60 A4TY General Description VDSS 600 V CS6N60 A4TY, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 7.3. Size:231K  wuxi china
 cs6n60a3d.pdf pdf_icon

CS6N60A8H

Silicon N-Channel Power MOSFET R CS6N60 A3D General Description VDSS 600 V CS6N60 A3D, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

 7.4. Size:351K  wuxi china
 cs6n60a4d.pdf pdf_icon

CS6N60A8H

Silicon N-Channel Power MOSFET R CS6N60 A4D General Description VDSS 600 V CS6N60 A4D, the silicon N-channel Enhanced ID 6 A PD(TC=25 ) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

MOSTRAR MÁS

Otros transistores... RFD16N05LSM9A , CS6N60A3D , CS6N60A3HDY , SI2306DS-T1 , SI2308DS-T1-GE3 , CS6N60A4H , NTMS4177PR , CS6N60A7H , 13N50 , CS6N60FA9H , CS6N60FA9H-G , UT3N06G-AE3 , CS6N70A3D1-G , SI4559EY , CS6N70A3H , SI4922BDY , CS6N70A8D .

History: VS3518AE | WSF3040 | WMK20N70D1 | WMK18N65EM | WMJ15N80M3 | VS3620GPMC | WSD40N10GDN56

 

 

 

 

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