CS7N65A4R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CS7N65A4R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 24 nC
   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 93 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: TO252

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CS7N65A4R Datasheet (PDF)

..1. Size:283K wuxi china
cs7n65a4r.pdf

Silicon N-Channel Power MOSFET R CS7N65 A4R General Description VDSS 650 V CS7N65 A4R, the silicon N-channel Enhanced ID 7 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

6.1. Size:759K wuxi china
cs7n65a4tdy.pdf

Silicon N-Channel Power MOSFET R CS7N65 A4TDY General Description VDSS 650 V CS7N65 A4TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

7.1. Size:760K wuxi china
cs7n65a0d.pdf

Silicon N-Channel Power MOSFET R CS7N65 A0D General Description VDSS 650 V CS7N65 A0D, the silicon N-channel Enhanced ID 7 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.98 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

7.2. Size:644K wuxi china
cs7n65a3tdy.pdf

Silicon N-Channel Power MOSFET R CS7N65 A3TDY General Description VDSS 650 V CS7N65 A3TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

7.3. Size:279K wuxi china
cs7n65a3r.pdf

Silicon N-Channel Power MOSFET R CS7N65 A3R General Description VDSS 650 V CS7N65 A3R, the silicon N-channel Enhanced ID 7 A PD(TC=25) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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