SQ9945BEY-T1-GE3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SQ9945BEY-T1-GE3 Datasheet (PDF)

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SQ9945BEY-T1-GE3www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N

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SQ9945BEYwww.vishay.comVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.064 AEC-Q101 QualifiedRDS(on) () at VGS = 4.5 V 0.082 Material categorization:ID (A) per leg 6For definitions of compliance please see Configuratio

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SQ9945AEYVishay SiliconixAutomotive Dual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60Pb-free Package with Low Thermal ResistanceAvailableRDS(on) () at VGS = 10 V 0.080RoHS*ID (A) 3.7AEC-Q101 RELIABILITYCOMPLIANTConfiguration Dual Passed all AEC-Q101 Reliability TestingD2D1 Characterization O

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