SQD40N06-14 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SQD40N06-14 Datasheet (PDF)

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SQD40N06-14www.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

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SQD40N06-14Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.014 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.017 100 % Rg and UIS TestedID (A) 40 Material categorization:Configuration Single

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SQD40N04-10Awww.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.010 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.014 Package with Low Thermal ResistanceID (A) 42 100 % Rg and UIS TestedConfiguration Single

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SQD40N04-10AVishay SiliconixAutomotiveN-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.010 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.014 Package with Low Thermal ResistanceID (A) 42 AEC-Q101 QualifieddConfiguration Single Compliant to Ro

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