SUD50P06-15L-GE3 Todos los transistores

 

SUD50P06-15L-GE3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SUD50P06-15L-GE3

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 113 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 70 nS

Cossⓘ - Capacitancia de salida: 380 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: TO252

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SUD50P06-15L-GE3 datasheet

 0.1. Size:819K  cn vbsemi
 sud50p06-15l-ge3.pdf pdf_icon

SUD50P06-15L-GE3

SUD50P06-15L-GE3 www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Material categorization 0.020 at VGS = - 10 V - 50 - 60 0.025 at VGS = - 4.5 V - 45 APPLICATIONS Load Switch TO-252 S G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Par

 2.1. Size:70K  vishay
 sud50p06-15l.pdf pdf_icon

SUD50P06-15L-GE3

SUD50P06-15L Vishay Siliconix P-Channel 60 V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.015 at VGS = - 10 V - 50d - 60 COMPLIANT Compliant to RoHS Directive 2002/95/EC 0.020 at VGS = - 4.5 V - 50 S TO-252 G Drain Connected to Tab G D S Top View D Ordering Informa

 3.1. Size:154K  vishay
 sud50p06-15.pdf pdf_icon

SUD50P06-15L-GE3

SUD50P06-15 Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Material categorization 0.015 at VGS = - 10 V For definitions of compliance please see - 50d - 60 www.vishay.com/doc?99912 0.020 at VGS = - 4.5 V - 50d APPLICATIONS TO-252 Load Switch S G Drain Connected to Tab D G S Top V

 3.2. Size:881K  cn vbsemi
 sud50p06-15.pdf pdf_icon

SUD50P06-15L-GE3

SUD50P06-15 www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Material categorization 0.020 at VGS = - 10 V - 50 - 60 0.025 at VGS = - 4.5 V - 45 APPLICATIONS Load Switch TO-252 S G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Paramete

MOSTRAR MÁS

Otros transistores... ST2341S23R , STB60N06-14 , STC5NF20V , SM4305PSKC , SM4307PSKC-TRG , SQ9945BEY-T1-GE3 , SQD40N06-14 , SUD50P04-09L-E3 , IRFZ44N , CS8N25FA9 , CS8N50A8R , CS8N50FA9R , CS8N60A8D , VB1101M , CS8N60ARD , TP0610K-T1 , TPC8103 .

 

 

 

 

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