VB1101M MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

VB1101M datasheet

..1. Size:512K cn vbsemi
vb1101m.pdf pdf_icon

VB1101M www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested 0.100 at VGS = 10 V 4.3 Material categorization 0.140 at VGS = 6 V 100 4.1 2.9 nC 0.150 at VGS = 4.5 V 3.7 APPLICATIONS DC/DC Converters Load Switch LED Backlight

9.1. Size:235K onsemi
nvb110n65s3f.pdf pdf_icon

MOSFET Power, Single N-Channel, D2PAK 650 V, 110 mW, 30 A NVB110N65S3F Description SUPERFET III MOSFET is ON Semiconductor s brand-new high www.onsemi.com voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize V(BR)DSS RDS(ON) MAX

9.2. Size:485K cn vbsemi
vb1106k.pdf pdf_icon

VB1106K www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 100 2.8 at VGS = 10 V Low Threshold 2 V (typ.) 260 Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage TrenchFET Power MOSFET Compliant to RoHS Directive 2002/

9.3. Size:673K cn vbsemi
vb1102m.pdf pdf_icon

VB1102M www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested 0.240 at VGS = 10 V 2.0 Material categorization 0.250 at VGS = 6 V 100 1.8 2.9 nC 0.260 at VGS = 4.5 V 1.7 APPLICATIONS DC/DC Converters Load Switch LED Backlight

Otros transistores... SQ9945BEY-T1-GE3 , SQD40N06-14 , SUD50P04-09L-E3 , SUD50P06-15L-GE3 , CS8N25FA9 , CS8N50A8R , CS8N50FA9R , CS8N60A8D , IRF540N , CS8N60ARD , TP0610K-T1 , TPC8103 , TPC8104 , TK40P04M , CS8N70FA9H2-G , CS8N80A8D , CS8N80A8H .