SI4953DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI4953DY
   Código: 4953
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 16 nC
   trⓘ - Tiempo de subida: 13 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.053 Ohm
   Paquete / Cubierta: SOP8

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SI4953DY Datasheet (PDF)

..1. Size:51K vishay
si4953dy.pdf

Si4953DYVishay SiliconixDual P-Channel 30-V(D-S) MOSFETFEATURESPRODUCT SUMMARYD 100% Rg TestedVDS (V) rDS(on) (W) ID (A)0.053 @ VGS = -10 V -4.9-30300.095 @ VGS = -4.5 V -3.6S1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top ViewD1 D1 D2 D2Ordering Information: Si4953DYSi4953DY-T1 (with Tape and Reel) P-Channel MOSFET P-Channel MOSFETABSOLUTE M

..2. Size:1324K kexin
si4953dy.pdf

SMD Type MOSFETDual P-Channel MOSFETSI4953DY (KI4953DY)SOP-8 Features VDS (V) =-30V ID =-4.9 A (VGS =-10V)1.50 0.15 RDS(ON) 53m (VGS =-10V) RDS(ON) 95m (VGS =-4.5V)1 Source1 5 Drain26 Drain22 Gate17 Drain13 Source2S1 S28 Drain14 Gate2G1 G2D1 D1 D2 D2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drai

0.1. Size:864K cn vbsemi
si4953dy-t1-e3.pdf

SI4953DY-T1-E3www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25T

8.1. Size:242K vishay
si4953ady.pdf

Si4953ADYVishay SiliconixDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.053 at VGS = - 10 V - 4.9 TrenchFET Power MOSFETs - 300.090 at VGS = - 4.5 V - 3.7 Compliant to RoHS Directive 2002/95/EC S1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25To

8.2. Size:1498K kexin
si4953ady.pdf

SMD Type MOSFETDual P-Channel MOSFETSI4953ADY (KI4953ADY)SOP-8 Unit:mm Features VDS (V) =-30V ID =-4.9 A (VGS =-10V)1.50 0.15 RDS(ON) 53m (VGS =-10V) RDS(ON) 90m (VGS =-4.5V)1 S1 5 D2 6 D22 G17 D13 S28 D14 G2S1 S2G1 G2D1 D1 D2 D2 Absolute Maximum Ratings Ta = 25Parameter Symbol 10 secs Steady State Unit Drain-Sourc

8.3. Size:3156K cn szxunrui
si4953.pdf

SOP-8L Dual -30V P-Channel PowerTrench MOSFET SI4953DualSI4953 P-Channel -30V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOP-8 D2D20.059@-10V.D1-30V -5.3A D10.089@-4.5VG2GS2G1 SSS1SO-8 SPin 1Equivalent Cir cuitD1 D2 General FEATURETrenchFET Power MOSFETLead free product is acquiredSurface mount packageG1 G2 S1 S2 MARKINGAPPLICATION

8.4. Size:864K cn vbsemi
si4953ady-t1-e3.pdf

SI4953ADY-T1-E3www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25

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