IRF644S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF644S 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 330 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Encapsulados: TO263
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IRF644S datasheet
..2. Size:2262K international rectifier
irf644spbf.pdf 
PD - 95116 IRF644SPbF Lead-Free 3/16/04 Document Number 91040 www.vishay.com 1 IRF644SPbF Document Number 91040 www.vishay.com 2 IRF644SPbF Document Number 91040 www.vishay.com 3 IRF644SPbF Document Number 91040 www.vishay.com 4 IRF644SPbF Document Number 91040 www.vishay.com 5 IRF644SPbF Document Number 91040 www.vishay.com 6 IRF644SPbF D2Pak Package Outli
..3. Size:167K vishay
irf644s sihf644s.pdf
IRF644S, SiHF644S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 Surface Mount RDS(on) ( )VGS = 10 V 0.28 Available in Tape and Reel Qg (Max.) (nC) 68 Dynamic dV/dt Rating Qgs (nC) 11 Repetitive Avalanche Rated Fast Switching Qgd (nC) 35 Ease of Paralleling Configuration Sing
..4. Size:193K vishay
irf644spbf sihf644s.pdf
IRF644S, SiHF644S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 Surface Mount RDS(on) ( )VGS = 10 V 0.28 Available in Tape and Reel Qg (Max.) (nC) 68 Dynamic dV/dt Rating Qgs (nC) 11 Repetitive Avalanche Rated Fast Switching Qgd (nC) 35 Ease of Paralleling Configuration Sing
8.1. Size:919K international rectifier
irf644.pdf
PD - 94871 IRF644PbF Lead-Free 12/5/03 Document Number 91039 www.vishay.com 1 IRF644PbF Document Number 91039 www.vishay.com 2 IRF644PbF Document Number 91039 www.vishay.com 3 IRF644PbF Document Number 91039 www.vishay.com 4 IRF644PbF Document Number 91039 www.vishay.com 5 IRF644PbF Document Number 91039 www.vishay.com 6 IRF644PbF TO-220AB Package Outline
8.3. Size:291K international rectifier
irf644n.pdf
PD - 94859 IRF644NPbF IRF644NS l Advanced Process Technology IRF644NL l Dynamic dv/dt Rating l 175 C Operating Temperature HEXFET Power MOSFET l Fast Switching D l Fully Avalanche Rated VDSS = 250V l Ease of Paralleling l Simple Drive Requirements l Lead-Free (only the TO-220AB RDS(on) = 240m version is currently available in a G lead-free configuration) Description ID =
8.5. Size:644K fairchild semi
irf644b.pdf
December 2013 IRF644B N-Channel BFET MOSFET 250 V, 14 A, 280 m Description Features These N-Channel enhancement mode power field effect 14 A, 250 V, RDS(on) = 280 m @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge (Typ. 47 nC) planar, DMOS technology. This advanced technology has Low Crss (Typ. 30 pF) been especially tailored to mi
8.6. Size:935K samsung
irf644a.pdf
Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Lower RDS(ON) 0.214 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va
8.7. Size:202K vishay
irf644 sihf644.pdf
IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.28 RoHS* Fast Switching Qg (Max.) (nC) 68 COMPLIANT Ease of Paralleling Qgs (nC) 11 Qgd (nC) 35 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DES
8.8. Size:124K vishay
irf644npbf irf644ns irf644nspbf irf644n irf644nlpbf.pdf
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 V Available Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.240 RoHS* 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 54 Fast Switching Qgs (nC) 9.2 Fully Avalanche Rated Ease of Paralleling Qgd
8.9. Size:202K vishay
irf644pbf sihf644.pdf
IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.28 RoHS* Fast Switching Qg (Max.) (nC) 68 COMPLIANT Ease of Paralleling Qgs (nC) 11 Qgd (nC) 35 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DES
Otros transistores... IRF640FI, IRF640L, IRF640S, IRF641, IRF642, IRF643, IRF644, IRF644A, 8N60, IRF645, IRF646, IRF650A, IRF654A, IRF710, IRF710A, IRF710S, IRF711
