2SJ213 Todos los transistores

 

2SJ213 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ213

Código: PP

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 320 nS

Conductancia de drenaje-sustrato (Cd): 75 pF

Resistencia drenaje-fuente RDS(on): 4.2 Ohm

Empaquetado / Estuche: SOT89

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2SJ213 Datasheet (PDF)

1.1. 2sj213.pdf Size:303K _nec

2SJ213
2SJ213

1.2. 2sj213.pdf Size:1034K _kexin

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2SJ213

SMD Type MOSFET P-Channel MOSFET 2SJ213 1.70 0.1 ■ Features ● VDS (V) =-100V ● ID =-0.5 A 0.42 0.1 0.46 0.1 ● RDS(ON) < 4.2Ω (VGS =-10V) ● RDS(ON) < 5Ω (VGS =-4V) 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS ±20 Continuous Drain Current ID -0.5 A

 5.1. 2sj214l-s.pdf Size:84K _upd

2SJ213
2SJ213



5.2. 2sj215.pdf Size:58K _upd

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2SJ213

2SJ215 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3P D 1 G 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SJ2

 5.3. 2sj210c.pdf Size:152K _upd

2SJ213
2SJ213

 Preliminary Data Sheet 2SJ210C R07DS1278EJ0200 Rev.2.00 P-CHANNEL MOSFET FOR SWITCHING Jul 08, 2015 Description The 2SJ210C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features  Directly driven by a 4.5 V power source.  Low on-state resistance RDS(on)1 = 2.7  MAX. (VGS = -10

5.4. 2sj217.pdf Size:82K _renesas

2SJ213
2SJ213

2SJ217 Silicon P Channel MOS FET REJ03G0850-0200 (Previous: NON-084) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device ? Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PRS

 5.5. rej03g0850 2sj217ds.pdf Size:95K _renesas

2SJ213
2SJ213

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.6. 2sj211.pdf Size:393K _nec

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5.7. 2sj212.pdf Size:308K _nec

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2SJ213

5.8. 2sj210.pdf Size:365K _nec

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2SJ213

5.9. 2sj211-3.pdf Size:1228K _kexin

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2SJ213

SMD Type MOSFET P-Channel MOSFET 2SJ211 SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) =-100V 1 2 +0.02 ● ID =-0.2 A +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 ● RDS(ON) < 20Ω (VGS =-10V) ● RDS(ON) < 30Ω (VGS =-4V) 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage

5.10. 2sj211.pdf Size:1220K _kexin

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SMD Type MOSFET P-Channel MOSFET 2SJ211 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● VDS (V) =-100V 1 2 ● ID =-0.2 A +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 ● RDS(ON) < 20Ω (VGS =-10V) ● RDS(ON) < 30Ω (VGS =-4V) 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS

5.11. 2sj212.pdf Size:1308K _kexin

2SJ213
2SJ213

SMD Type MOSFET P-Channel MOSFET 2SJ212 1.70 0.1 ■ Features ● VDS (V) =-60V ● ID =-500m A 0.42 0.1 0.46 0.1 ● RDS(ON) < 3Ω (VGS =-10V) ● RDS(ON) < 4Ω (VGS =-4V) 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 Continuous Drain Current ID -0.5 A Pul

5.12. 2sj210-3.pdf Size:1256K _kexin

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2SJ213

SMD Type MOSFET P-Channel MOSFET 2SJ210 SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 3 ● VDS (V) =-60V ● ID =-200m A ● RDS(ON) < 10Ω (VGS =-10V) 1 2 +0.02 +0.1 0.15 -0.02 0.95-0.1 ● RDS(ON) < 15Ω (VGS =-4V) +0.1 1.9-0.2 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VD

5.13. 2sj210.pdf Size:964K _kexin

2SJ213
2SJ213

SMD Type MOSFET P-Channel MOSFET 2SJ210 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) =-60V 1 2 ● ID =-200m A +0.1 +0.05 0.95-0.1 0.1-0.01 ● RDS(ON) < 10Ω (VGS =-10V) +0.1 1.9-0.1 ● RDS(ON) < 15Ω (VGS =-4V) 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -6

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