2SJ356 Datasheet. Equivalente

 ..1. Size:65K  nec
 2sj356.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ356 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ356 is a P-channel MOS FET of a vertical type and is PACKAGE DIMENSIONS (in mm) a switching element that can be directly driven by the output of an 4.5 0.1 IC operating at 5 V. 1.6 0.2 This product has a low ON resistance and superb switching 1.5 0.1 characteristics and is ideal for

 ..2. Size:1054K  kexin
 2sj356.pdf

SMD Type MOSFET P-Channel MOSFET 2SJ356 1.70 0.1 Features VDS (V) =-60V ID =-2 A (VGS =-10V) 0.42 0.1 RDS(ON) 0.5 (VGS =-10V) 0.46 0.1 RDS(ON) 0.95 (VGS =-4V) 1.Gate 2.Drain Drain (D) 3.Source Internal Gate (G) diode Gate protection diode Source (S) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Volta

 9.1. Size:203K  renesas
 2sj358c.pdf

Preliminary Data Sheet 2SJ358C R07DS1262EJ0300 Rev.3.00 P-CHANNEL MOSFET FOR SWITCHING Aug 17, 2015 Description The 2SJ358C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.0 V power source. Features Directly driven by a 4.0 V power source. Low on-state resistance RDS(on)1 = 143 m MAX. (VGS = -1

 9.2. Size:514K  renesas
 2sj355.pdf

2010 4 1 NEC

 9.3. Size:96K  renesas
 rej03g0859 2sj350ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.4. Size:193K  renesas
 2sj358.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.5. Size:82K  renesas
 2sj350.pdf

2SJ350 Silicon P Channel MOS FET REJ03G0859-0200 (Previous ADE-208-138) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0003AD-A (

 9.6. Size:70K  renesas
 2sj351.pdf

2SJ351, 2SJ352 Silicon P Channel MOS FET REJ03G0860-0200 (Previous ADE-208-1193) Rev.2.00 Sep 07, 2005 Description Low frequency power amplifier Complementary pair with 2SK2220, 2SK2221 Features High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics

 9.7. Size:70K  renesas
 2sj352.pdf

2SJ351, 2SJ352 Silicon P Channel MOS FET REJ03G0860-0200 (Previous ADE-208-1193) Rev.2.00 Sep 07, 2005 Description Low frequency power amplifier Complementary pair with 2SK2220, 2SK2221 Features High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics

 9.8. Size:83K  renesas
 rej03g0860 2sj351 2sj352.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.9. Size:96K  nec
 2sj358.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ358 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH Package Drawings (unit mm) The 2SJ358 is a P-channel vertical MOS FET that can 5.7 0.1 be used as a switching element. The 2SJ358 can be 1.5 0.1 2.0 0.2 directly driven by an IC operating at 5 V. The 2SJ358 features a low on-resistance and excellent switching characteristics, and is suitable

 9.10. Size:55K  nec
 2sj353.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ353 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ353 is a P-channel MOS FET of a vertical type and is PACKAGE DIMENSIONS (in mm) a switching element that can be directly driven by the output of an 7.0 MAX. 1.2 IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actu

 9.11. Size:45K  nec
 2sj357.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ357 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH The 2SJ357 is a P-channel vertical MOS FET that can be Package Drawings (unit mm) used as a switching element. The 2SJ357 can be directly 5.7 0.1 driven by an IC operating at 5 V. 1.5 0.1 2.0 0.2 The 2SJ357 features a low on-resistance and excellent switching characteristics, and is suitable

 9.12. Size:63K  nec
 2sj355-t1.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ355 P-CHANNEL MOS FET FOR HIGH SWITCHING The 2SJ355 is a P-channel MOS FET of a vertical type and is PACKAGE DIMENSIONS (in mm) a switching element that can be directly driven by the output of an 4.5 0.1 IC operating at 5 V. 1.6 0.2 This product has a low ON resistance and superb switching 1.5 0.1 characteristics and is ideal for drivi

 9.13. Size:833K  cn vbsemi
 2sj355.pdf

2SJ355 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.056 at VGS = - 4.5 V - 6.0 APPLICATIONS Load Switch Battery Switch D S G G D S D P-Channel MOSFET ABSOL