2SJ602-ZJ Datasheet. Equivalente

 ..1. Size:1557K  kexin
 2sj602-zj.pdf

SMD Type MOSFET P-Channel MOSFET 2SJ602-ZJ Features VDS (V) =-60V ID =-20A RDS(ON) 73m (VGS =-10V) RDS(ON) 107m (VGS =-4V) Low Ciss Ciss = 1300 pF (TYP.) Drain Body Gate Diode Gate Protection Source Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 2

 7.1. Size:209K  nec
 2sj602-s-z-zj.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:81K  nec
 2sj602.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ602 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ602 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for solenoid, motor and lamp driver. 2SJ602 TO-220AB 2SJ602-S TO-262 FEATURES 2SJ602-ZJ TO-263 Super low on-state resistance Note RDS(on)1 = 73 m MAX. (VGS = -10 V, ID = -10 A) 2S

 9.1. Size:27K  sanyo
 2sj608.pdf

Ordering number ENN6995 2SJ608 P-Channel Silicon MOSFET 2SJ608 Ultrahigh Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh speed switching. 2085A Low-voltage drive. [2SJ608] 4.5 Mounting height 9.5mm. 1.9 2.6 10.5 Meets radial taping. 1.2 1.4 1.2 0.5 1.6 0.5 1 2 3 1 Source 2 Drain 3 Gate Specificati

 9.2. Size:30K  sanyo
 2sj609.pdf

 9.3. Size:79K  nec
 2sj603.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ603 SWITCHING P-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SJ603 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for solenoid, motor and lamp driver. 2SJ603 TO-220AB 2SJ603-S TO-262 FEATURES 2SJ603-ZJ TO-263 Super low on-state resistance Note RDS(on)1 = 48 m MAX. (VGS = -10 V, ID = -13 A) 2

 9.4. Size:79K  nec
 2sj604.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ604 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ604 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for solenoid, motor and lamp driver. 2SJ604 TO-220AB 2SJ604-S TO-262 FEATURES 2SJ604-ZJ TO-263 Super low on-state resistance Note RDS(on)1 = 30 m MAX. (VGS = -10 V, ID = -23 A) 2S

 9.5. Size:211K  nec
 2sj605-s-z-zj.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.6. Size:207K  nec
 2sj604-s-z-zj.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.7. Size:207K  nec
 2sj603-s-z-zj.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.8. Size:83K  nec
 2sj605.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ605 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SJ605 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for high current switching applications. 2SJ605 TO-220AB 2SJ605-S TO-262 FEATURES 2SJ605-ZJ TO-263 Super low on-state resistance 2SJ605-Z TO-220SMDNote RDS(on)1 = 20

 9.9. Size:54K  nec
 2sj601.pdf

PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ601 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SJ601 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for solenoid, motor and lamp driver. 2SJ601 TO-251 2SJ601-Z TO-252 FEATURES Low on-state resistance RDS(on)1 = 31 m MAX. (VGS = 10 V, ID = 18 A)

 9.10. Size:77K  nec
 2sj607.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ607 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ607 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for high current switching applications. 2SJ607 TO-220AB 2SJ607-S TO-262 FEATURES 2SJ607-ZJ TO-263 Super low on-state resistance Note RDS(on)1 = 11 m MAX. (VGS = -10 V, ID = -42 A

 9.11. Size:238K  nec
 2sj600-z.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.12. Size:206K  nec
 2sj607-s-z-zj.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.13. Size:52K  nec
 2sj601-z.pdf

PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ601 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SJ601 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for solenoid, motor and lamp driver. 2SJ601 TO-251 2SJ601-Z TO-252 FEATURES Low on-state resistance RDS(on)1 = 31 m MAX. (VGS = 10 V, ID = 18 A)

 9.14. Size:40K  nec
 2sj600.pdf

PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ600 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SJ600 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for solenoid, motor and lamp driver. 2SJ600 TO-251 2SJ600-Z TO-252 FEATURES Low on-state resistance RDS(on)1 = 50 m MAX. (VGS = 10 V, ID = 13 A)

 9.15. Size:206K  nec
 2sj606-s-z-zj.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.16. Size:78K  nec
 2sj606.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ606 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ606 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for high current switching applications. 2SJ606 TO-220AB 2SJ606-S TO-262 FEATURES 2SJ606-ZJ TO-263 Super low on-state resistance Note RDS(on)1 = 15 m MAX. (VGS = -10 V, ID = -42 A

 9.17. Size:1564K  kexin
 2sj604-zj.pdf

SMD Type MOSFET P-Channel MOSFET 2SJ604-ZJ Features VDS (V) =-60V ID =-45A RDS(ON) 30m (VGS =-10V ) RDS(ON) 43m (VGS =-4V) Low Ciss Ciss = 3300 pF (TYP.) Drain Body Gate Diode Gate Protection Source Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 20

 9.18. Size:1500K  kexin
 2sj607-zj.pdf

SMD Type MOSFET P-Channel MOSFET 2SJ607-ZJ Features VDS (V) =-60V ID =-83A RDS(ON) 11m (VGS =-10V) RDS(ON) 16m (VGS =-4V) Low Ciss Ciss = 7500 pF (TYP.) Drain Body Gate Diode Gate Protection Source Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 20

 9.19. Size:1542K  kexin
 2sj605-zj.pdf

SMD Type MOSFET P-Channel MOSFET 2SJ605-ZJ Features VDS (V) =-60V ID =-65A RDS(ON) 20m (VGS =-10V) RDS(ON) 31m (VGS =-4V) Low Ciss Ciss = 4600 pF (TYP.) Drain Body Gate Diode Gate Protection Source Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 20

 9.20. Size:1510K  kexin
 2sj606-zj.pdf

SMD Type MOSFET P-Channel MOSFET 2SJ606-ZJ Features VDS (V) =-60V ID =-83A RDS(ON) 15m (VGS =-10V) RDS(ON) 23m (VGS =-4V) Low Ciss Ciss = 4800 pF (TYP.) Drain Body Gate Diode Gate Protection Source Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 20

 9.21. Size:937K  kexin
 2sj600-z.pdf

SMD Type MOSFET P-Channel MOSFET 2SJ600-Z TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 VDS (V) =-60V ID =-25A RDS(ON) 50m (VGS =-10V) 0.127 +0.1 0.80-0.1 RDS(ON) 79m (VGS =-4V) max Low Ciss Ciss = 1900 pF (TYP.) + 0.1 1 Gate 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Drain 3 Source Drain Body

 9.22. Size:1555K  kexin
 2sj603-zj.pdf

SMD Type MOSFET P-Channel MOSFET 2SJ603-ZJ Features VDS (V) =-60V ID =-25A RDS(ON) 48m (VGS =-10V) RDS(ON) 75m (VGS =-4V) Low Ciss Ciss = 1900 pF (TYP.) Drain Body Gate Diode Gate Protection Source Diode Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 20

 9.23. Size:1408K  cn vbsemi
 2sj601-z.pdf

2SJ601-Z www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Material categorization 0.020 at VGS = - 10 V - 50 - 60 0.025 at VGS = - 4.5 V - 45 APPLICATIONS Load Switch TO-252 S G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter S