KO3401
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KO3401
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.4
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12
V
|Id|ⓘ - Corriente continua de drenaje: 4.2
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.2
nS
Cossⓘ - Capacitancia
de salida: 115
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065
Ohm
Paquete / Cubierta:
SOT89
Búsqueda de reemplazo de MOSFET KO3401
KO3401
Datasheet (PDF)
..1. Size:1515K kexin
ko3401.pdf 
SMD Type MOSFET P-Channel Enhancement MOSFET KO3401 SOT-89 Unit mm Features 1.70 0.1 VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON) 65m (VGS =-10V) RDS(ON) 70m (VGS =-4.5V) D 0.42 0.1 RDS(ON) 120m (VGS =-2.5V) 0.46 0.1 1.Gate G 2.Drain S 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source
..2. Size:1535K kexin
ao3401 ko3401.pdf
SMD Type MOSFET P-Channel Enhancement MOSFET AO3401 (KO3401) SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 Features 3 VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) 1 2 +0.1 RDS(ON) 65m (VGS =-4.5V) +0.05 0.95 -0.1 0.1 -0.01 D +0.1 1.9 -0.1 RDS(ON) 120m (VGS =-2.5V) 1. Gate G 2. Source S 3. Drain Absolute M
9.1. Size:56K kexin
ko3403.pdf
SMD Type IC SMD Type Transistors P-Channel Enhancement Mode Field Effect Transistor KO3403 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features VDS (V) =-30V ID =-2.6 A (VGS=-10V) 12 RDS(ON) 130 m (VGS =-10V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 RDS(ON) 180 m (VGS =-4.5V) RDS(ON) 260m (VGS =-2.5V) 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute
9.2. Size:1572K kexin
ao3407 ko3407.pdf
SMD Type IC SMD Type MOSFET P-Channel Enhancement MOSFET AO3407 (KO3407) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = -30V ID = -4.1 A 1 2 +0.02 +0.1 0.15 -0.02 RDS(ON) 52m (VGS = -10V) 0.95 -0.1 D 1.9+0.1 -0.2 RDS(ON) 87m (VGS = -4.5V) 1. Gate 2. Source G 3. Drain S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Sourc
9.3. Size:1063K kexin
ao3402 ko3402.pdf
SMD Type IC SMD Type MOSFET N-Channel Enhancement MOSFET AO3402 (KO3402) SOT-23-3 Unit mm +0.2 2.9 -0.1 Features +0.1 0.4 -0.1 VDS (V) = 30V 3 ID = 4 A RDS(ON) 55m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V) 1 2 +0.02 +0.1 0.15 -0.02 D 0.95 -0.1 RDS(ON) 110m (VGS = 2.5V) +0.1 1.9 -0.2 1. Gate G 2. Source S 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating
9.4. Size:54K kexin
ko3402.pdf
SMD Type IC SMD Type MOSFET N-Channel Enhancement Mode Field Effect Transistor KO3402(AO3402) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features VDS (V) = 30V ID =4A 12 +0.1 +0.05 RDS(ON) 55m (VGS = 10V) 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 RDS(ON) 70m (VGS =4.5V) RDS(ON) 110m (VGS =2.5V) 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings T
9.5. Size:52K kexin
ko3407.pdf
SMD Type IC SMD Type Transistors P-Channel Enhancement Mode Field Effect Transistor KO3407 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 3 VDS (V) = -30V ID =-4.1 A 12 RDS(ON) 52m (VGS = -10V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 RDS(ON) 87m (VGS = -4.5V) 1.9-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symb
9.6. Size:53K kexin
ko3400 ao3400.pdf
SMD Type IC SMD Type MOSFET N-Channel Enhancement Mode Field Effect Transistor KO3400(AO3400) SOT-23 Unit mm +0.1 Features 2.9-0.1 +0.1 0.4-0.1 VDS (V) = 30V 3 ID =5.8 A(VGS =10V) RDS(ON) 28m (VGS = 10V) 12 RDS(ON) 33m (VGS =4.5V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 RDS(ON) 52m (VGS =2.5V) 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maxim
9.7. Size:1335K kexin
ao3409 ko3409.pdf
SMD Type MOSFET P-Channel Enhancement MOSFET AO3409 (KO3409) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) = -30V ID = -2.6 A (VGS = -10V) RDS(ON)
9.8. Size:1163K kexin
ko3400-89.pdf
SMD Type IC SMD Type MOSFET N-Channel MOSFET KO3400 SOT-89 Unit mm Features 1.70 0.1 VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 52m (VGS = 2.5V) 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 12 V Continu
9.9. Size:54K kexin
ko3409.pdf
SMD Type MOSFET P-Channel Enhancement Mode Field Effect Transistor KO3409(AO3409) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 3 VDS (V) = -30V ID =-2.6A(VGS = -10V) 12 RDS(ON)
9.10. Size:161K kexin
ao3404 ko3404.pdf
SMD Type IC SMD Type MOSFET N-Channel Enhancement MOSFET AO3404 (KO3404) 3 Features VDS (V) = 30V ID =5.8 A (VGS=10V) 12 RDS(ON) 28 m (VGS =10V) RDS(ON) 43 m (VGS =4.5V) D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source V
9.11. Size:54K kexin
ko3402 ao3402.pdf
SMD Type IC SMD Type MOSFET N-Channel Enhancement Mode Field Effect Transistor KO3402(AO3402) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features VDS (V) = 30V ID =4A 12 +0.1 +0.05 RDS(ON) 55m (VGS = 10V) 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 RDS(ON) 70m (VGS =4.5V) RDS(ON) 110m (VGS =2.5V) 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings T
9.12. Size:55K kexin
ko3404.pdf
SMD Type IC SMD Type Transistors N-Channel Enhancement Mode Field Effect Transistor KO3404 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 3 VDS (V) = 30V ID =5.8 A (VGS=10V) RDS(ON) 28 m (VGS =10V) 12 +0.1 +0.05 0.95-0.1 0.1-0.01 RDS(ON) 43 m (VGS =4.5V) +0.1 1.9-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Paramet
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