SI2325DS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Si2325DSVishay SiliconixP-Channel 150-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available1.2 at VGS = - 10 V - 0.69 TrenchFET Power MOSFET- 150 7.71.3 at VGS = - 6.0 V - 0.66 Ultra Low On-Resistance Small Size APPLICATIONS Active Clamp Circuits in DC/DC Power SuppliesT

SMD Type MOSFETP-Channel Enhancement MOSFET SI2325DS (KI2325DS)SOT-23Unit: mm+0.12.9-0.1 Features+0.10.4 -0.1 VDS (V) =-150V3 ID =-0.69A (VGS =-10V) RDS(ON) 1.2 (VGS =-10V) RDS(ON) 1.3 (VGS =-6V)1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Param

SMD Type MOSFETP-Channel Enhancement MOSFET SI2325DS (KI2325DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.1 Features3 VDS (V) =-150V ID =-0.69A (VGS =-10V) RDS(ON) 1.2 (VGS =-10V)1 2+0.02 RDS(ON) 1.3 (VGS =-6V) +0.10.15 -0.020.95-0.1+0.11.9-0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25

Si2321DSVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETS 0.057 at VGS = - 4.5 V - 3.3RoHS0.076 at VGS = - 2.5 V - 20 - 2.8COMPLIANTAPPLICATIONS0.110 at VGS = - 1.8 V - 2.3 Load Switch PA SwitchTO-236(SOT-23)G 13 DS 2Top ViewSi2321

Si2323DDSVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)d Qg (Typ.) 100 % Rg Tested Material categorization:0.039 at VGS = - 4.5 V - 5.3For definitions of compliance please see- 20 0.050 at VGS = - 2.5 V - 4.7 13.6 nCwww.vishay.com/doc?999120.075 at VGS = - 1.8 V - 3.8APPLICATION

MCC Micro Commercial ComponentsTM20736 Marilla Street Chatsworth Micro Commercial ComponentsCA 91311SI2321 Phone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF"P-Channel -20V,-2.9A, RDS(ON)=57m@VGS=-4.5V RDS(ON)=76m@VGS=-2.5V Enhancement Mode High dense cell design for extremely low RDS(ON)

Si2323CDSVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.039 at VGS = - 4.5 V TrenchFET Power MOSFET- 6e 100 % Rg Tested- 20 0.050 at VGS = - 2.5 V - 5.8 9 nC Compliant to RoHS Directive 2002/95/EC0.063 at VGS = - 1.8 V - 5.1APPLI

Si2328DSVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.250 at VGS = 10 V 100 1.5 100 % Rg Tested TrenchFET Power MOSFET TO-236(SOT-23)G 13 DS 2Top ViewSi2328DS (D8)**Marking CodeOrdering Information:Si2328DS-T1-E3 (Lead (Pb)-free)Si2328DS-

Si2327DSVishay SiliconixP-Channel 200-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available2.35 at VGS = - 10 V - 0.49 TrenchFET Power MOSFET- 200 8.02.45 at VGS = - 6.0 V - 0.48 Ultra Low On-Resistance Small Size APPLICATIONS Active Clamp Circuits in DC/DC Power Supplies

Si2320DSNew ProductVishay SiliconixN-Channel 200-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)200 7 @ VGS = 10 V "0.28TO-236(SOT-23)G 13 DS 2Top ViewSi2320DS (D0)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 5 sec Steady State UnitDrain-Source Voltage VDS "200VVGate-Source Voltage VGS "20TA= 25_C "0.

Si2323DSVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.039 at VGS = - 4.5 V - 4.7 TrenchFET Power MOSFET 0.052 at VGS = - 2.5 V - 20 - 4.10.068 at VGS = - 1.8 V - 3.5APPLICATIONS Load Switch PA SwitchTO-236(SOT-23)G 13 DS 2Top ViewS

Si2329DSVishay SiliconixP-Channel 8 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = - 4.5 V TrenchFET Power MOSFET- 6e 100 % Rg Tested0.036 at VGS = - 2.5 V - 6e Compliant to RoHS Directive 2002/95/EC- 8 0.048 at VGS = - 1.8 V - 5.911.8 nCAP

Si2323CDSVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () 100 % Rg TestedID (A)a Qg (Typ.) Material categorization:0.039 at VGS = -4.5 V -6eFor definitions of compliance please see-20 0.050 at VGS = -2.5 V -5.8 9 nCwww.vishay.com/doc?999120.063 at VGS = -1.8 V -5.1APPLICATIONS

SI2324AFeatures TrenchFET Power MOSFET Low RDS(ON) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1N-Channel MOSFET Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Maximum Ratings Operating Junction Temperature Range: -55C to +150C S

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2323P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)APPLICATIONS0.043 @ VGS = -4.5 V -4.0D Load Switch-20 0.054 @ VGS = -2.5 V - 4.0D PA Switch0.075 @ VGS = -1.8 V - 2.0TO-236(SOT-23)G 13 DS 2Top ViewSi2323 (D3)**Marking CodeABSOLUTE MAXIMUM RATINGS

Shenzhen Tuofeng Semiconductor Technology Co., LtdSi2328N-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)100 0.300 @ VGS = 10 V 1.5(SOT-23)G 13 DS 2Top ViewSi2328DS (D8)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 5 sec Steady State UnitDrain-Source Voltage VDS 100VGate-Source Voltage VGS "20Con

SMD Type MOSFETP-Channel Enhancement MOSFET SI2321DS (KI2321DS)SOT-23Unit: mm+0.12.9 -0.1 Features+0.10.4-0.1 VDS (V) =-20V3 ID =-3.3A (VGS =-4.5V) RDS(ON) 57m (VGS =-4.5V) RDS(ON) 76m (VGS =-2.5V)1 2+0.1+0.050.95 -0.1 0.1 -0.01 RDS(ON) 110m (VGS =-1.8V)+0.11.9 -0.1G 11.Gate3 D2.SourceS 23.Drain

SMD Type MOSFETN-Channel Enhancement MOSFET SI2328DS (KI2328DS)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features3 VDS (V) = 100V ID = 1.5 A (VGS = 10V) RDS(ON) 250m (VGS = 4.5V)1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Steady State Un

SMD Type MOSFET ICSMD Type N-Channel Enhancement MOSFETSI2324DS (KI2324DS)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDSS = 100V ID = 2.3 A (VGS = 10V) RDS(ON) 234m (VGS = 10V)1 2+0.02 RDS(ON) 267m (VGS = 6V) +0.10.15 -0.020.95 -0.1+0.11.9-0.2D RDS(ON) 278m (VGS = 4.5V)1. Gate2. SourceG3. Drain

SMD Type MOSFETP-Channel Enhancement MOSFET SI2323DS (KI2323DS)SOT-23Unit: mm Features2.9+0.1-0.1+0.10.4 -0.1 VDS (V) =-20V3 ID =-4.7A (VGS =-4.5V) RDS(ON) 39m (VGS =-4.5V) RDS(ON) 52m (VGS =-2.5V)1 2 RDS(ON) 68m (VGS =-1.8V)+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1G 11.Gate3 D2.SourceS 23.Drain A

SMD Type MOSFETP-Channel Enhancement MOSFET SI2321DS (KI2321DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features3 VDS (V) =-20V ID =-3.3A (VGS =-4.5V) RDS(ON) 57m (VGS =-4.5V)1 2 RDS(ON) 76m (VGS =-2.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 110m (VGS =-1.8V)G 13 D1. GateS 22. Source3. Drai

SMD Type MOSFETP-Channel Enhancement MOSFET SI2323DS (KI2323DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features3 VDS (V) =-20V ID =-4.7A (VGS =-4.5V) RDS(ON) 39m (VGS =-4.5V)1 2 RDS(ON) 52m (VGS =-2.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 68m (VGS =-1.8V)G 13 D1. GateS 2 2. Source3. Drain

R UMW UMW SI2328ASOT-23-3L Plastic-Encapsulate MOSFETS FeaturesSOT23 VDS (V) = 100V ID = 1.5 A (VGS = 10V) RDS(ON) 250m (VGS = 4.5V)MARKINGEquivalent Circuit 1. GATE 2. SOURCE D3. DRAIN GS Absolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS 100V Gate-Source Voltage VGS 20 Ta=

SI2328MOSFET ROHSN-Channel Enhancement-Mode MOSFET SOT-23-FeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceMAXIMUM RANTINGSCharacteristic Symbol Max Unit100Drain-Source Voltage BV VDSSGate- Source VoltageV VGS +20Drain Current (continuous)I 1.5 ADDrain Current (pulsed) I ADM6Total Device Dissipa

SI2324DS-T1-GE3www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested0.240 at VGS = 10 V 2.0 Material categorization:0.250 at VGS = 6 V100 1.8 2.9 nC0.260 at VGS = 4.5 V1.7APPLICATIONS DC/DC Converters Load Switch LED Back

SI2323CDS-T1-GE3www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter

SI2323DS-T1www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT

SI2328DSwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested0.240 at VGS = 10 V 2.0 Material categorization:0.250 at VGS = 6 V100 1.8 2.9 nC0.260 at VGS = 4.5 V1.7APPLICATIONS DC/DC Converters Load Switch LED Backlightin

SI2323DDS-T1-GE3www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter