SI2335DS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI2335DS
   Código: E5*
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.45 V
   Qgⓘ - Carga de la puerta: 9 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 260 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET SI2335DS

SI2335DS Datasheet (PDF)

..1. Size:181K vishay
si2335ds.pdf

Si2335DSVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.051 at VGS = - 4.5 V - 4.0 TrenchFET Power MOSFETs: 1.8 V Rated 0.070 at VGS = - 2.5 V - 12 - 3.50.106 at VGS = - 1.8 V - 3.0TO-236(SOT-23)G 13 DS 2Top ViewSi2335DS (E5)**Marking CodeOrde

..2. Size:1573K kexin
si2335ds.pdf

SMD Type MOSFETP-Channel Enhancement MOSFET SI2335DS (KI2335DS)SOT-23Unit: mm+0.1 Features 2.9-0.1+0.10.4 -0.1 VDS (V) =-12V3 ID =-4.0A (VGS =-4.5V) RDS(ON) 51m (VGS =-4.5V) RDS(ON) 70m (VGS =-2.5V)1 2+0.10.95-0.1 RDS(ON) 106m (VGS =-1.8V) 0.1+0.05-0.011.9+0.1-0.1G 11.Gate3 D2.SourceS 23.Drain Abso

0.1. Size:1625K kexin
si2335ds-3.pdf

SMD Type MOSFETP-Channel Enhancement MOSFET SI2335DS (KI2335DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.1 Features0.4-0.13 VDS (V) =-12V ID =-4.0A (VGS =-4.5V) RDS(ON) 51m (VGS =-4.5V)1 2 RDS(ON) 70m (VGS =-2.5V)+0.02+0.10.15 -0.020.95 -0.1+0.1 RDS(ON) 106m (VGS =-1.8V)1.9 -0.2G 13 D1. GateS 22. Source3. Drai

0.2. Size:905K cn vbsemi
si2335ds-t1.pdf

SI2335DS-T1www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT

9.1. Size:226K vishay
si2333dds.pdf

Si2333DDSVishay SiliconixP-Channel 12 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg Tested Material categorization:0.028 at VGS = - 4.5 V - 6eFor definitions of compliance please see0.032 at VGS = - 3.7 V - 6ewww.vishay.com/doc?99912- 12 0.040 at VGS = - 2.5 V - 6e 9 nC0.063 at

9.2. Size:186K vishay
si2333ds.pdf

Si2333DSVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.032 at VGS = - 4.5 V - 5.3 TrenchFET Power MOSFET 0.042 at VGS = - 2.5 V - 12 - 4.6APPLICATIONS0.059 at VGS = - 1.8 V - 3.9 Load Switch PA SwitchTO-236(SOT-23)G 13 DS 2Top ViewS

9.3. Size:231K vishay
si2334ds.pdf

New ProductSi2334DSVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.044 at VGS = 4.5 V 4.9 TrenchFET Power MOSFET30 3.7 nC0.050 at VGS = 2.5 V 4.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC Converter for

9.4. Size:240K vishay
si2338ds.pdf

New ProductSi2338DSVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.028 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.033 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSOT-23APP

9.5. Size:204K vishay
si2336ds.pdf

New ProductSi2336DSVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.042 at VGS = 4.5 V TrenchFET Power MOSFET5.2 100 % Rg Tested0.046 at VGS = 2.5 V 30 4.9 5.7 nC Compliant to RoHS Directive 2002/95/EC0.052 at VGS = 1.8 V 4.1APPLICATI

9.6. Size:224K vishay
si2333cds.pdf

Si2333CDSVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 4.5 V - 5.1 TrenchFET Power MOSFET Compliant to RoHS Directive 2002/95/EC0.045 at VGS = - 2.5 V - 4.5 9 nC- 120.059 at VGS = - 1.8 V - 3.9APPLICATIONS Load Switc

9.7. Size:216K vishay
si2333cd.pdf

9.8. Size:209K vishay
si2331ds.pdf

Si2331DSVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETS 0.048 at VGS = - 4.5 V - 3.6RoHS0.062 at VGS = - 2.5 V - 12 - 3.2COMPLIANTAPPLICATIONS0.090 at VGS = - 1.8 V - 2.7 Load Switch PA SwitchTO-236 (SOT-23) G 1 3 D S 2 Top View

9.9. Size:200K vishay
si2337ds.pdf

Si2337DSVishay SiliconixP-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.270 at VGS = - 10 V - 2.2 TrenchFET Power MOSFET- 80 70.303 at VGS = - 6 V - 2.1TO-236(SOT-23)SG 13 DS 2GTop ViewSi2337DS (E7)** Marking CodeDOrdering Information: Si2337DS-T

9.10. Size:984K mcc
si2333.pdf

SI2333Features TrenchFET Power Mosfet Excellent RDS(ON) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1P-Channel MOSFET Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Ratings Operating Junction Temperature Range : -5

9.11. Size:1947K kexin
si2333cds ki2333cds.pdf

SMD Type MOSFETP-Channel Enhancement MOSFET SI2333CDS (KI2333CDS)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) =-12V ID =-5.1A (VGS =-4.5V) RDS(ON) 35m (VGS =-4.5V)1 2+0.02+0.1 RDS(ON) 45m (VGS =-2.5V)0.15 -0.020.95 -0.1+0.11.9-0.2 RDS(ON) 59m (VGS =-1.8V)G 1 3 D 1. Gate2. SourceS 2 3. D

9.12. Size:1223K kexin
si2333ds.pdf

SMD Type MOSFETP-Channel MOSFETSI2333DS (KI2333DS)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) =-12V ID =-5.3 A (VGS =-4.5V)1 2 RDS(ON) 32m (VGS =-4.5V) +0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.1 RDS(ON) 42m (VGS =-2.5V) RDS(ON) 59m (VGS =-1.8V)1. Gate2. Source3. DrainG 13 DS 2 Absolute Max

9.13. Size:1896K kexin
si2333cds.pdf

SMD Type MOSFETP-Channel Enhancement MOSFET SI2333CDS (KI2333CDS)SOT-23Unit: mm+0.1 Features2.9 -0.1+0.10.4 -0.1 VDS (V) =-12V3 ID =-5.1A (VGS =-4.5V) RDS(ON) 35m (VGS =-4.5V) RDS(ON) 45m (VGS =-2.5V)1 2+0.1+0.05 RDS(ON) 59m (VGS =-1.8V)0.95-0.1 0.1-0.01+0.11.9-0.1G 1 1.Gate3 D 2.SourceS 2 3.Drain

9.14. Size:2293K kexin
si2337ds.pdf

SMD Type MOSFETP-Channel Enhancement MOSFET SI2337DS (KI2337DS)SOT-23Unit: mm+0.12.9 -0.1 Features+0.10.4-0.13 VDS (V) =-80V ID =-2.2A (VGS =-10V) RDS(ON) 270m (VGS =-10V)S1 2 RDS(ON) 303m (VGS =-6V)+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1GG 11.Gate3 D2.SourceS 23.DrainD Absolute Maximum Ratings Ta = 2

9.15. Size:1240K kexin
si2333ds-3.pdf

SMD Type MOSFETP-Channel MOSFETSI2333DS (KI2333DS)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) =-12V ID =-5.3 A (VGS =-4.5V)1 2 RDS(ON) 32m (VGS =-4.5V) +0.02+0.10.15 -0.020.95 -0.1+0.11.9-0.2 RDS(ON) 42m (VGS =-2.5V) RDS(ON) 59m (VGS =-1.8V)1. Gate2. Source3. DrainG 13 DS 2 Absolute

9.16. Size:2335K kexin
si2337ds-3.pdf

SMD Type MOSFETP-Channel Enhancement MOSFET SI2337DS (KI2337DS)SOT-23-3Unit: mm+0.2 Features2.9 -0.1+0.10.4 -0.1 VDS (V) =-80V3 ID =-2.2A (VGS =-10V) RDS(ON) 270m (VGS =-10V)S RDS(ON) 303m (VGS =-6V)1 2+0.02+0.10.15 -0.020.95-0.1+0.11.9-0.2G 1 G3 D1. GateS 22. Source3. DrainD Absolute Maximum Ratings T

9.17. Size:1947K kexin
si2333cds-3.pdf

9.18. Size:1409K born
si2333.pdf

SI2333MOSFET ROHSP-Channel Enhancement-Mode MOSFET SOT-23-FeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceMAXIMUM RANTINGSCharacteristic Symbol Max UnitDrain-Source Voltage BV -12 VDSSGate- Source VoltageV +8 VGSDrain Current (continuous)I -5.1 ADDrain Current (pulsed) I -20 ADMTotal Device Dissipa

9.19. Size:848K cn vbsemi
si2338ds-t1-ge3.pdf

Si2338DS-T1-GE3www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT

9.20. Size:1472K cn vbsemi
si2333dds-t1.pdf

SI2333DDS-T1www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATION

9.21. Size:866K cn vbsemi
si2333ds-t1-ge3.pdf

SI2333DS-T1-GE3www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICAT

9.22. Size:866K cn vbsemi
si2333cds-t1-ge3.pdf

SI2333CDS-T1-GE3www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICA

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