SI7129DN Todos los transistores

 ..1. Size:562K  vishay
 si7129dn.pdf

 ..2. Size:2351K  kexin
 si7129dn.pdf

SMD Type MOSFET P-Channel MOSFET SI7129DN (KI7129DN) 1212-8 (DFN) Features VDS (V) =-30V ID =-35 A (VGS =-10V) S 3.30 mm 3.30 mm RDS(ON) 11.4m (VGS =-10V) 1 S 2 S RDS(ON) 20m (VGS =-4.5V) 3 G S 4 D 8 D 7 D 6 D G 5 Bottom V iew D Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Sourc

 9.1. Size:547K  vishay
 si7121dn.pdf

New Product Si7121DN Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = - 10 V - 16d 100% Rg Tested RoHS - 30 22 nC COMPLIANT 100% UIS Tested 0.0305 at VGS = - 4.5 V - 16d APPLICATIONS PowerPAK 1212-8 Notebook Battery Charging S Noteb

 9.2. Size:533K  vishay
 si7120dn.pdf

Si7120DN Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFET 0.019 at VGS = 10 V RoHS 10 60 COMPLIANT New Low Thermal Resistance 0.028 at VGS = 4.5 V 8.2 PowerPAK 1212-8 Package with Low 1.07 mm Profile 100 % Rg Tested APPLICATIONS PowerPAK 1212-8

 9.3. Size:576K  vishay
 si7120adn.pdf

 9.4. Size:574K  vishay
 si7123dn.pdf

New Product Si7123DN Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0106 at VGS = - 4.5 V - 16.0 TrenchFET Power MOSFET 1.8 V Rated - 20 0.0136 at VGS = - 2.5 V - 14.1 Ultra Low On-Resistance for Increased Battery Life 0.0189 at VGS = - 1.8 V - 12.0 New

 9.5. Size:628K  vishay
 si7121adn.pdf

Si7121ADN www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Low thermal resistance PowerPAK package 0.0150 at VGS = -10 V -18 e 100 % Rg and UIS tested -30 0.0200 at VGS = -6 V -18 e 16 nC Material categorization 0.0260 at VGS = -4.5 V -18 e For definitions