2SK2926-ZJ Todos los transistores

SMD Type MOSFET N-Channel MOSFET 2SK2926-ZJ Features VDS (V) = 60V ID = 15 A (VGS = 10V) RDS(ON) 55m (VGS = 10V) RDS(ON) 110m (VGS = 4V) High speed switching D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 Continuous Drain Current ID 15 Pulsed Drai

2SK2926(L), 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1040-0200 (Previous ADE-208-535) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.042 typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code PRSS0004ZD-B RENESAS Package code PRSS0004ZD-C (Package name DPAK(L)-(2)) (Package name DP

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

isc N-Channel MOSFET Transistor 2SK2926L FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R =55m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

isc N-Channel MOSFET Transistor 2SK2926S FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R =55m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d