2SK3305-ZJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK3305-ZJ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 2.5 V
   Qgⓘ - Carga de la puerta: 13 nC
   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: TO263

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2SK3305-ZJ Datasheet (PDF)

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2sk3305-s 2sk3305 2sk3305-zj.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3305SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3305 is N-Channel DMOS FET device that features aPART NUMBER PACKAGElow gate charge and excellent switching characteristics, and2SK3305 TO-220ABdesigned for high voltage applications such as switching power2SK3305-S TO-262supply, AC adapter.

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SMD Type MOSFETN-Channel MOSFET2SK3305-ZJ Features VDS S = 500V ID = 5 A (VGS = 10V) RDS(ON) 1.5 (VGS = 10V) Gate voltage rating: 30 V Avalanche capability ratingsDrain (D)BodyGate (G) DiodeSource (S) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 500V Gate-Source Voltage VGS 30 Con

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2sk3305-zj.pdf

isc N-Channel MOSFET Transistor 2SK3305-ZJFEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

6.1. Size:282K inchange semiconductor
2sk3305-s.pdf

isc N-Channel MOSFET Transistor 2SK3305-SFEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

7.1. Size:43K kexin
2sk3305.pdf

SMD Type MOSFETMOS Field Effect Transistor2SK3305TO-263Unit: mm+0.2Features 4.57-0.2+0.11.27-0.1Low gate chargeQG = 13 nC TYP. (VDD = 400V, VGS =10 V, ID =5.0A)Gate voltage rating 30 V+0.10.1max1.27-0.1Low on-state resistance+0.1RDS(on) =1.5 MAX. (VGS =10V, ID =2.5A)0.81-0.12.54Avalanche capability ratings1Gate+0.22.54-0.2 +0.1 +0.25.08-0.1 0.4-0.

7.2. Size:288K inchange semiconductor
2sk3305.pdf

isc N-Channel MOSFET Transistor 2SK3305FEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

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