AO4476 Todos los transistores

 

AO4476 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AO4476

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.8 nS

Cossⓘ - Capacitancia de salida: 340 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0105 Ohm

Encapsulados: SOP8

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AO4476 datasheet

 ..1. Size:1222K  kexin
ao4476.pdf pdf_icon

AO4476

SMD Type MOSFET N-Channel MOSFET AO4476 (KO4476) SOP-8 Features VDS (V) = 30V ID = 15 A (VGS = 10V) RDS(ON) 10.5m (VGS = 10V) 1.50 0.15 RDS(ON) 17m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Ga

 0.1. Size:365K  aosemi
ao4476a.pdf pdf_icon

AO4476

AO4476A 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO4476A combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 15A extremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)

 0.2. Size:2008K  kexin
ao4476a.pdf pdf_icon

AO4476

SMD Type MOSFET N-Channel MOSFET AO4476A (KO4476A) SOP-8 Features VDS (V) = 30V ID = 15 A (VGS = 10V) RDS(ON) 7.7m (VGS = 10V) 1.50 0.15 RDS(ON) 10.8m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V

 9.1. Size:158K  aosemi
ao4472.pdf pdf_icon

AO4476

AO4472 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4472 uses advanced trench technology to provide VDS (V) = 30V excellent RDS(ON), shoot-through immunity, body diode www.DataSheet4U.com ID = 19A (VGS = 10V) characteristics and ultra-low gate resistance. This device is RDS(ON)

Otros transistores... A9452 , AMS6006 , AO4306 , AO4404 , AO4406 , AO4408 , AO4418 , AO4444 , STP80NF70 , AO4492 , AO4702 , AO4704 , AP2322GN , AP9974 , BSS138E , D1096 , F501 .

History: 2SK1330 | FTA02N65

 

 

 


History: 2SK1330 | FTA02N65

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