AO4476 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO4476
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 3.8 nS
   Cossⓘ - Capacitancia de salida: 340 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0105 Ohm
   Paquete / Cubierta: SOP8

Búsqueda de reemplazo de MOSFET AO4476

AO4476 Datasheet (PDF)

..1. Size:1222K kexin
ao4476.pdf

SMD Type MOSFETN-Channel MOSFETAO4476 (KO4476)SOP-8 Features VDS (V) = 30V ID = 15 A (VGS = 10V) RDS(ON) 10.5m (VGS = 10V)1.50 0.15 RDS(ON) 17m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Ga

0.1. Size:365K aosemi
ao4476a.pdf

AO4476A 30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4476A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 15Aextremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)

0.2. Size:2008K kexin
ao4476a.pdf

SMD Type MOSFETN-Channel MOSFETAO4476A (KO4476A)SOP-8 Features VDS (V) = 30V ID = 15 A (VGS = 10V) RDS(ON) 7.7m (VGS = 10V)1.50 0.15 RDS(ON) 10.8m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V

9.1. Size:158K aosemi
ao4472.pdf

AO4472 N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThe AO4472 uses advanced trench technology to provide VDS (V) = 30Vexcellent RDS(ON), shoot-through immunity, body diode www.DataSheet4U.comID = 19A (VGS = 10V)characteristics and ultra-low gate resistance. This device is RDS(ON)

9.2. Size:129K aosemi
ao4474.pdf

AO4474N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO4474/L uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device VDS (V) = 30Vis suitable for use as a high side switch in SMPS and ID = 13.4A (VGS = 10V)general purpose applications. RDS(ON)

9.3. Size:192K aosemi
ao4478.pdf

AO447830V N-Channel MOSFETGeneral Description Product SummaryThe AO4478 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge. ThisID = 9A (VGS = 10V)device is suitable for use as general puspose, PWM andRDS(ON)

9.4. Size:1096K kexin
ao4478.pdf

SMD Type MOSFETN-Channel MOSFETAO4478 (KO4478)SOP-8 Features VDS (V) = 30V ID = 9 A (VGS = 10V)1.50 0.15 RDS(ON) 19m (VGS = 10V) RDS(ON) 26m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-S

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