NDT6N70 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NDT6N70
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 95 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 95 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.8 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET NDT6N70

NDT6N70 Datasheet (PDF)

..1. Size:3175K kexin
ndt6n70.pdf

SMD Type MOSFETN-Channel Enhancement MOSFETNDT6N70TO-252Unit: mm+ 0.15 Features6.50- 0.15+0.12.30 -0.1+ 0.25.30- 0.2 +0.80.50 -0.7 VDS (V) = 700V ID = 4.8A (VGS = 10V) RDS(ON) 1.8 (VGS = 10V)D0.127 Low gate charge ( typical 16nC)+0.10.80 -0.1maxG + 0.11 Gate2.3 0.60- 0.1+ 0.154.60- 0.152 DrainS3 Source Absol

0.1. Size:3144K kexin
ndt6n70p.pdf

DIP Type MOSFETN-Channel Enhancement MOSFETNDT6N70PTO-251 Features VDS (V) = 700V ID = 4.8A (VGS = 10V)1 2 3 RDS(ON) 1.8 (VGS = 10V) Low gate charge ( typical 16nC)D1 32GSUnit: mm Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 700V Gate-Source Voltage VGS 30 Tc=25 4.8 Continuou

9.1. Size:1327K kexin
ndt6n60p.pdf

DIP Type MOSFETN-Channel MOSFETNDT6N60PTO-251 Features VDS (V) = 600V1 2 3 ID = 6.2 A (VGS = 10V) RDS(ON) 1.5 (VGS = 10V) Fast switching capability Low reverse transfer Capacitance1 32DrainUnit: mmGateSource Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 600V Gate-Source Voltage V

9.2. Size:1815K kexin
ndt6n60.pdf

SMD Type MOSFETN-Channel MOSFETNDT6N60 TO-252Unit: mm6.50+0.15-0.15+0.12.30 -0.15.30+0.2-0.2 +0.80.50 -0.7 Features4 VDS (V) = 600V ID = 6 A (VGS = 10V) RDS(ON) 1.7 (VGS = 10V) 0.1270.80+0.1 max-0.1 Low Gate Charge Low Reverse transfer capacitances1 Gate2.3 0.60+ 0.1- 0.12 Drain+0.154.60 -0.153 Source4 Drain

9.3. Size:3425K kexin
ndt6n65p.pdf

DIP Type MOSFETN-Channel Enhancement MOSFETNDT6N65PTO-251 Features VDS (V) = 650V1 2 3 ID = 4.8A (VGS = 10V) RDS(ON) 1.8 (VGS = 10V)D Low gate charge ( typical 16nC)1 32GSUnit: mm Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 650V Gate-Source Voltage VGS 30 Tc=25 4.8 Continuou

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: