SI2306DS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI2306DS
   Código: A6*
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 1.25 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 3.5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
   Carga de la puerta (Qg): 4.2 nC
   Tiempo de subida (tr): 7.5 nS
   Conductancia de drenaje-sustrato (Cd): 120 pF
   Resistencia entre drenaje y fuente RDS(on): 0.046 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET SI2306DS

SI2306DS Datasheet (PDF)

..1. Size:64K vishay
si2306ds.pdf

Si2306DSVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.057 @ VGS = 10 V 3.530300.094 @ VGS = 4.5 V 2.8-TO-236(SOT-23)G 13 DS 2Top ViewSi2306DS (A6)**Marking CodeOrdering Information: Si2306DS-T1ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter

..2. Size:1404K kexin
si2306ds.pdf

SMD TypeSMD Type ICSMD Type MOSFETN-Channel 30-V (D-S) MOSFETSI2306DS (KI2306DS)SOT-23Unit: mm+0.12.9 -0.1Features +0.10.4 -0.13 RDS(ON) 57m (VGS =-10V) RDS(ON) 94 m (VGS =-4.5V)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1D 1.Base1. Gate2.Emitter2. SourceG 3. Drain3.collectorS Absolute Maximum Ratings Ta = 25Parameter

0.1. Size:1411K kexin
si2306ds-3.pdf

SMD Type MOSFETICN-Channel 30-V (D-S) MOSFETSI2306DS (KI2306DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features3 VDS (V) = 30V RDS(ON) 57m (VGS =-10V) RDS(ON) 94 m (VGS =-4.5V)1 2+0.02+0.1D 0.15 -0.020.95 -0.1+0.11.9 -0.2G 1. Gate2. SourceS 3. DrainAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

0.2. Size:884K cn vbsemi
si2306ds-t1.pdf

SI2306DS-T1www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

8.1. Size:207K vishay
si2306bds.pdf

Si2306BDSVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.047 at VGS = 10 V 4.030 3.0 100 % Rg Tested RoHS0.065 at VGS = 4.5 V 3.5COMPLIANTTO-236(SOT-23)G 13 DS 2Top ViewSi2306BDS (L6 )** Marking CodeOrdering Information: Si2306

8.2. Size:532K shenzhen
si2306.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2306N-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)FEATURES0.057 @ VGS = 10 V 3.5D Power MOSFET30300.094 @ VGS = 4.5 V 2.8D 100% Rg Tested-TO-236(SOT-23)G 13 DS 2Top ViewSi2306 *Marking CodeOrdering Information: Si2306DS-T1ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOT

8.3. Size:845K blue-rocket-elect
si2306.pdf

SI2306(BRCS2306M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 N MOS N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features , MOS Trench FET Power MOSFET 100% Rg Tested. / Applications Primarily the display screen drive applications.

8.4. Size:1581K kexin
si2306 ki2306.pdf

SMD Type MOSFETICN-Channel 30-V (D-S) MOSFETSI2306 (KI2306)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features3 VDS (V) = 30V RDS(ON) 57m (VGS =-10V) RDS(ON) 94 m (VGS =-4.5V)1 2+0.02+0.1D 0.15 -0.020.95 -0.1+0.11.9 -0.2G 1. Gate2. SourceS 3. DrainAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-S

8.5. Size:1649K umw-ic
si2306a.pdf

RUMWUMW SI2306AUMW SI2306A N-Channel 30-V (D-S) MOSFETSOT23 Features VDS (V) = 30V RDS(ON) 57m (VGS =-10V) RDS(ON) 94 m (VGS =-4.5V)1. GATE 2. SOURCE 3. DRAIN MARKINGD A69TG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS 20 Ta=25 3.5 Continuous Dr

8.6. Size:586K guangdong hottech
si2306.pdf

Plastic-Encapsulate MosfetsFEATURESSI2306Lower on-resistanceN-Channel MOSFETReliable and RuggedAbsolute Maximum Ratings (TA=25oC, unless otherwise noted)Parameter Symbol Ratings UnitDrain-Source Voltage VDS 30 VGate-source Voltage VGS 20 V1.GateDrain Current (Continuous) ID 3.16 A 2.SourceSOT-233.DrainDrain Current (Pulsed)a IDM 10 AoTotal Power Dissipation @TA=2

8.7. Size:1694K mdd
si2306.pdf

SI2306 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 30V N-Channel MOSFET 3 ID MaxV(BR)DSS RDS(on)Typ 28m@10V 1. GATE 5.0A 30V 2. SOURCE 38m@4.5V 1 3. DRAIN 2 FEATURE APPLICATION Load Switch for Portable Devices Trench FET Power MOSFET DC/DC Converter MARKING Equivalent circuit D A6sHB G S PACKAGE SPECIFICATIONS Reel DIA. Q'TY/Reel Box Si

8.8. Size:385K cn puolop
si2306.pdf

SI2306 30V N-Channel Enhancement Mode MOSFETVDS= 30V RDS(ON), Vgs@ 10V, Ids@ 47m3.5A RDS(ON), Vgs@ 4.5V, Ids@ 2.8A 63m FeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceHigh Power and Current handing capability Ideal for Li ion battery pack applicationsPackage Dimensions DSOT-23GSMillimeterMillimeterREF. RE

8.9. Size:949K cn twgmc
si2306.pdf