SI2306DS Todos los transistores

 ..1. Size:64K  vishay
 si2306ds.pdf

Si2306DS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D 100% Rg Tested 0.057 @ VGS = 10 V 3.5 30 30 0.094 @ VGS = 4.5 V 2.8 - TO-236 (SOT-23) G 1 3 D S 2 Top View Si2306DS (A6)* *Marking Code Ordering Information Si2306DS-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter

 ..2. Size:1404K  kexin
 si2306ds.pdf

SMD Type SMD Type IC SMD Type MOSFET N-Channel 30-V (D-S) MOSFET SI2306DS (KI2306DS) SOT-23 Unit mm +0.1 2.9 -0.1 Features +0.1 0.4 -0.1 3 RDS(ON) 57m (VGS =-10V) RDS(ON) 94 m (VGS =-4.5V) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 D 1.Base 1. Gate 2.Emitter 2. Source G 3. Drain 3.collector S Absolute Maximum Ratings Ta = 25 Parameter

 0.1. Size:1411K  kexin
 si2306ds-3.pdf

SMD Type MOSFET IC N-Channel 30-V (D-S) MOSFET SI2306DS (KI2306DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 Features 3 VDS (V) = 30V RDS(ON) 57m (VGS =-10V) RDS(ON) 94 m (VGS =-4.5V) 1 2 +0.02 +0.1 D 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1. Gate 2. Source S 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

 0.2. Size:884K  cn vbsemi
 si2306ds-t1.pdf

SI2306DS-T1 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)

 8.1. Size:207K  vishay
 si2306bds.pdf

Si2306BDS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.047 at VGS = 10 V 4.0 30 3.0 100 % Rg Tested RoHS 0.065 at VGS = 4.5 V 3.5 COMPLIANT TO-236 (SOT-23) G 1 3 D S 2 Top View Si2306BDS (L6 )* * Marking Code Ordering Information Si2306

 8.2. Size:532K  shenzhen
 si2306.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2306 N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) FEATURES 0.057 @ VGS = 10 V 3.5 D Power MOSFET 30 30 0.094 @ VGS = 4.5 V 2.8 D 100% Rg Tested - TO-236 (SOT-23) G 1 3 D S 2 Top View Si2306 *Marking Code Ordering Information Si2306DS-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOT

 8.3. Size:845K  blue-rocket-elect
 si2306.pdf

SI2306(BRCS2306M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 N MOS N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features , MOS Trench FET Power MOSFET 100% Rg Tested. / Applications Primarily the display screen drive applications.

 8.4. Size:1581K  kexin
 si2306 ki2306.pdf

SMD Type MOSFET IC N-Channel 30-V (D-S) MOSFET SI2306 (KI2306) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 Features 3 VDS (V) = 30V RDS(ON) 57m (VGS =-10V) RDS(ON) 94 m (VGS =-4.5V) 1 2 +0.02 +0.1 D 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1. Gate 2. Source S 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-S

 8.5. Size:1649K  umw-ic
 si2306a.pdf

R UMW UMW SI2306A UMW SI2306A N-Channel 30-V (D-S) MOSFET SOT 23 Features VDS (V) = 30V RDS(ON) 57m (VGS =-10V) RDS(ON) 94 m (VGS =-4.5V) 1. GATE 2. SOURCE 3. DRAIN MARKING D A69T G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 Ta=25 3.5 Continuous Dr

 8.6. Size:586K  guangdong hottech
 si2306.pdf

Plastic-Encapsulate Mosfets FEATURES SI2306 Lower on-resistance N-Channel MOSFET Reliable and Rugged Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-source Voltage VGS 20 V 1.Gate Drain Current (Continuous) ID 3.16 A 2.Source SOT-23 3.Drain Drain Current (Pulsed)a IDM 10 A o Total Power Dissipation @TA=2

 8.7. Size:1694K  mdd
 si2306.pdf

SI2306 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 30V N-Channel MOSFET 3 ID Max V(BR)DSS RDS(on)Typ 28m @10V 1. GATE 5.0A 30V 2. SOURCE 38m @4.5V 1 3. DRAIN 2 FEATURE APPLICATION Load Switch for Portable Devices Trench FET Power MOSFET DC/DC Converter MARKING Equivalent circuit D A6sHB G S PACKAGE SPECIFICATIONS Reel DIA. Q'TY/Reel Box Si

 8.8. Size:385K  cn puolop
 si2306.pdf

SI2306 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@ 10V, Ids@ 47m 3.5A RDS(ON), Vgs@ 4.5V, Ids@ 2.8A 63m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions D SOT-23 G S Millimeter Millimeter REF. RE

 8.9. Size:949K  cn twgmc
 si2306.pdf

SI2305 SI2301 SI2306 Equivalent Circuit MARKING 3400 R 2306 3400 1.GATE 2.SOURCE 3.DRAIN