APM2558NU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APM2558NU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 400 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET APM2558NU

APM2558NU Datasheet (PDF)

..1. Size:265K sino
apm2558nu.pdf

APM2558NU N-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/60A,DRDS(ON)=4.5m (Typ.) @ VGS=10VSRDS(ON)=7.5m (Typ.) @ VGS=4.5VG Reliable and Rugged Avalanche RatedTop View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Mar

8.1. Size:168K anpec
apm2556nu.pdf

APM2556NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/60A,RDS(ON)=4.5m (typ.) @ VGS=10VG DRDS(ON)=7.5m (typ.) @ VGS=4.5V Super High Dense Cell DesignS Reliable and Rugged Top View of TO-252 Lead Free and Green Devices AvailableD (RoHS Compliant)ApplicationsG Power Management in Desktop Computer orDC/DC ConvertersSN-Channel MOSFET

9.1. Size:168K anpec
apm2510nu.pdf

APM2510NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/50A,RDS(ON)=8.5m (typ.) @ VGS=10VG DRDS(ON)=15m (typ.) @ VGS=4.5VS Super High Dense Cell Design Avalanche Rated Top View of TO-252 Reliable and RuggedD Lead Free and Green Devices Available (RoHS Compliant)ApplicationsG Power Management in Desktop Computer orDC/DC ConvertersSN-Ch

9.2. Size:200K anpec
apm2509nu.pdf

APM2509NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/50A , RDS(ON)=7.5m(typ.) @ VGS=10V RDS(ON)=13m(typ.) @ VGS=4.5V Super High Dense Cell Design Avalanche Rated Top View of TO-252 Reliable and RuggedD Lead Free Available (RoHS Compliant)ApplicationsG Power Management in Desktop Computer or DC/DC ConvertersSN-Channel MOSFETOrderi

9.3. Size:180K anpec
apm2513nu.pdf

APM2513NUN-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/40A,RDS(ON)=10.5m (typ.) @ VGS=10VG DRDS(ON)=16m (typ.) @ VGS=4.5V Super High Dense Cell Design S Avalanche Rated Top View of TO-252 Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in Desktop Computer orSDC/DC ConvertersN-Cha

9.4. Size:265K sino
apm2518nu.pdf

APM2518NU N-Channel Enhancement Mode MOSFETFeatures Pin Description 25V/50A,DRDS(ON)=8m (Typ.) @ VGS=10VSRDS(ON)=15m (Typ.) @ VGS=4.5VG Reliable and Rugged Avalanche RatedTop View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Markin

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