SM1A11NSV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM1A11NSV
   Código: 1A11N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 23 nC
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: SOT223

Búsqueda de reemplazo de MOSFET SM1A11NSV

SM1A11NSV Datasheet (PDF)

..1. Size:272K sino
sm1a11nsv.pdf

SM1A11NSV N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/6A, RDS(ON)= 45m (Max.) @ VGS=10VG Reliable and RuggedDS Lead Free and Green Devices Available(RoHS Compliant)Top View SOT-223DApplicationsG Power Management for Boost Converters. Synchronous Rectifiers for SMPS.S LED Backlighting.N-Channel MOSFETOrdering and Marking Information

6.1. Size:150K sino
sm1a11nsub.pdf

SM1A11NSUB N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/24A, RDS(ON)= 45m (Max.) @ VGS=10VS Reliable and RuggedDG Lead Free and Green Devices AvailableTop View of TO-251(RoHS Compliant) 100% UIS + Rg TestedDApplicationsG High Speed Switching. High Voltage Synchronous Rectification forS Industrial Application.N-Channel MOS

6.2. Size:261K sino
sm1a11nsu.pdf

SM1A11NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/24A,Drain 4 RDS(ON)= 45m (Max.) @ VGS=10V3Source2 Reliable and Rugged1Gate Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-252-3DApplicationsG High Speed Switching. High Voltage Synchronous Rectification forS Industrial Application.N-Channel MOSFETOrderi

6.3. Size:247K sino
sm1a11nsf.pdf

SM1A11NSF N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/24A, RDS(ON)= 45m (Max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices Available G(RoHS Compliant) Top View of TO-220DApplicationsG High Speed Switching. High Voltage Synchronous Rectification forS Industrial Application.N-Channel MOSFET Fully Avalanche Rated.Ordering

6.4. Size:149K sino
sm1a11nsfp.pdf

SM1A11NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/20A, RDS(ON)= 45m (Max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220FP 100% UIS + Rg TestedDApplicationsG High Efficiency Synchronous Rectification in SMPS. Uninterruptible Power Supply. Hard Switched and

6.5. Size:261K sino
sm1a11nsk.pdf

SM1A11NSK N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 100V/6A, D RDS(ON)= 45m (Max.) @ VGS=10VS Reliable and RuggedSS Lead Free and Green Devices AvailableGTop View of SOP-8(RoHS Compliant)( 5,6,7,8 )D D D DApplications(4)G Power Management for Boost Converters. Synchronous Rectifiers for SMPS. LED Backlighting.S S S(1, 2, 3

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