SM1A30NSK Todos los transistores

 

SM1A30NSK MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SM1A30NSK

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm

Encapsulados: SOP8

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SM1A30NSK datasheet

 ..1. Size:262K  sino
sm1a30nsk.pdf pdf_icon

SM1A30NSK

SM1A30NSK N-Channel Enhancement Mode MOSFET Features Pin Description D D D 100V/5A, D RDS(ON)= 70m (Max.) @ VGS=10V RDS(ON)= 80m (Max.) @ VGS=4.5V S S S Reliable and Rugged G Lead Free and Green Devices Available Top View of SOP-8 (RoHS Compliant) ( 5,6,7,8 ) D D DD Applications (4) G Power Management in DC/DC Converter. For LED Backlight DC-DC boost converter

 6.1. Size:233K  sino
sm1a30nsu.pdf pdf_icon

SM1A30NSK

SM1A30NSU N-Channel Enhancement Mode MOSFET Features Pin Description 100V/18A, D RDS(ON)= 70m (max.) @ VGS= 10V S RDS(ON)= 80m (max.) @ VGS= 4.5V G 100% UIS + Rg Tested Reliable and Rugged Top View of TO-252-2 Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in DC/DC Converter. For LED Backlight DC-DC Boost Converter S So

 9.1. Size:168K  sino
sm1a32nsu.pdf pdf_icon

SM1A30NSK

SM1A32NSU N-Channel Enhancement Mode MOSFET Features Pin Description 100V/34A, Drain 4 RDS(ON)= 29m (max.) @ VGS= 10V RDS(ON)= 34m (max.) @ VGS= 4.5V 3 Source 2 Reliable and Rugged 1 Gate Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-252-3 D Applications G For telecom PSE solution. S N-Channel MOSFET Ordering and Marking Information Pac

 9.2. Size:173K  sino
sm1a35psu.pdf pdf_icon

SM1A30NSK

SM1A35PSU P-Channel Enhancement Mode MOSFET Features Pin Description -100V/-18A, Drain 4 RDS(ON)= 90m (max.) @ VGS=-10V 3 Source RDS(ON)= 102m (max.) @ VGS=-4.5V 2 1 Gate Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant) 100% UIS Tested D ESD Protection HBM ESD protection level pass 8KV Note The diode connected betw

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