SM1A30NSK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM1A30NSK
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: SOP8

Búsqueda de reemplazo de MOSFET SM1A30NSK

SM1A30NSK Datasheet (PDF)

..1. Size:262K sino
sm1a30nsk.pdf

SM1A30NSK N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 100V/5A, D RDS(ON)= 70m (Max.) @ VGS=10V RDS(ON)= 80m (Max.) @ VGS=4.5VSSS Reliable and RuggedG Lead Free and Green Devices Available Top View of SOP-8(RoHS Compliant)( 5,6,7,8 )D D DDApplications(4)G Power Management in DC/DC Converter. For LED Backlight DC-DC boost converter

6.1. Size:233K sino
sm1a30nsu.pdf

SM1A30NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/18A, D RDS(ON)= 70m (max.) @ VGS= 10VS RDS(ON)= 80m (max.) @ VGS= 4.5VG 100% UIS + Rg Tested Reliable and RuggedTop View of TO-252-2 Lead Free and Green Devices AvailableD (RoHS Compliant)ApplicationsG Power Management in DC/DC Converter. For LED Backlight DC-DC Boost ConverterS So

9.1. Size:168K sino
sm1a32nsu.pdf

SM1A32NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/34A,Drain 4 RDS(ON)= 29m(max.) @ VGS= 10V RDS(ON)= 34m(max.) @ VGS= 4.5V 3 Source2 Reliable and Rugged1 Gate Lead Free and Green Devices Available (RoHS Compliant)Top View of TO-252-3DApplicationsG For telecom PSE solution.SN-Channel MOSFETOrdering and Marking InformationPac

9.2. Size:173K sino
sm1a35psu.pdf

SM1A35PSUP-Channel Enhancement Mode MOSFETFeatures Pin Description -100V/-18A,Drain 4 RDS(ON)= 90m(max.) @ VGS=-10V3 SourceRDS(ON)= 102m(max.) @ VGS=-4.5V 21 Gate Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant) 100% UIS TestedD ESD Protection HBM ESD protection level pass 8KVNote : The diode connected betw

9.3. Size:170K sino
sm1a33psu.pdf

SM1A33PSUP-Channel Enhancement Mode MOSFETFeatures Pin Description -100V/-38A,Drain 4 RDS(ON)= 39m(max.) @ VGS=-10V3 Source RDS(ON)= 49m(max.) @ VGS=-4.5V2 100% UIS+Rg Tested1 Gate Reliable and RuggedTop View of TO-252-2 Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management for Industrial DC / DC Converters.SP

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