IRF730A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF730A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 74 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 5.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 22 nS
Cossⓘ - Capacitancia de salida: 103 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de IRF730A MOSFET
IRF730A PDF Specs
irf730a.pdf
PD - 94976 SMPS MOSFET IRF730APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 400V 1.0 5.5A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanch... See More ⇒
irf730a.pdf
Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 0.765 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic ... See More ⇒
irf730apbf sihf730a.pdf
IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg results in Simple Drive VDS (V) 400 Available Requirement RDS(on) ( )VGS = 10 V 1.0 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 22 Ruggedness Qgs (nC) 5.8 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 9.3 Effecti... See More ⇒
irf730a sihf730a.pdf
IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg results in Simple Drive VDS (V) 400 Available Requirement RDS(on) ( )VGS = 10 V 1.0 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 22 Ruggedness Qgs (nC) 5.8 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 9.3 Effecti... See More ⇒
Otros transistores... IRF720FI , IRF720S , IRF721 , IRF722 , IRF7220 , IRF723 , IRF7233 , IRF730 , IRFZ44N , IRF730AL , IRF730AS , IRF730FI , IRF730S , IRF731 , IRF732 , IRF7321D2 , IRF7322D1 .
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