SM2004NSD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM2004NSD
   Código: SM2004
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.6 V
   Qgⓘ - Carga de la puerta: 3.6 nC
   trⓘ - Tiempo de subida: 12.5 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: SOT89

Búsqueda de reemplazo de MOSFET SM2004NSD

SM2004NSD Datasheet (PDF)

..1. Size:241K sino
sm2004nsd.pdf

SM2004NSD N-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/7A, RDS(ON)= 22m (max.) @ VGS= 10VSD RDS(ON)= 28m (max.) @ VGS= 4.5VG RDS(ON)= 54m (max.) @ VGS= 2.5V 100% UIS and Rg testedTop View SOT-89 ESD Protection Reliable and RuggedD (2) Lead Free and Green Devices Available (RoHS Compliant)G (1)Applications Switching Regulators.S (3) Sw

9.1. Size:145K 1
bsm200gar120dn2.pdf

BSM 200 GAR 120 DN2IGBT Power Module Single switch with chopper diode at collector Chopper diode like diode of BSM300GA120DN2 Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 200 GAR 120 DN2 1200V 290A HB 200GAR C67070-A2301-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE =

9.2. Size:244K infineon
bsm200gb120dlc.pdf

Technische Information / technical informationIGBT-ModuleBSM200GB120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstro

9.3. Size:156K eupec
bsm200gb170dlc.pdf

Technische Information / Technical InformationIGBT-ModuleBSM 200 GB 170 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-SperrspannungTvj = 25C VCES 1700 Vcollector-emitter voltageTC = 80 C IC,nom. 200 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 400 APeriodischer Kollek

9.4. Size:134K eupec
bsm200gd60dlc.pdf

Technische Information / Technical InformationIGBT-ModuleBSM 200 GD 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTC= 45C IC,nom. 200 AKollektor-DauergleichstromDC-collector currentTC= 25C IC 226 APeriodischer Kollektor Spitzenstrom

9.5. Size:88K eupec
bsm200gb120dlc.pdf

Technische Information / Technical InformationIGBT-ModuleBSM200GB120DLCIGBT-Modulesvorlufige Datenpreliminary dataHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 1200 Vcollector-emitter voltageTC = 80 C IC,nom. 200 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 420

9.6. Size:290K eupec
bsm200gal120dlc.pdf

Technische Information / technical informationIGBT-ModuleBSM200GAL120DLCIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Vorlufige Daten / preliminary dataHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emit

9.7. Size:147K eupec
bsm200ga120dn2 bsm200ga120dn2s.pdf

BSM 200 GA 120 DN2IGBT Power Module Single switch Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 200 GA 120 DN2 1200V 300A SINGLE SWITCH 1 C67076-A2006-A70BSM 200 GA 120 DN2 S 1200V 300A SSW SENSE 1 C67070-A2006-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollect

9.8. Size:169K eupec
bsm200gb120dn2.pdf

BSM 200 GB 120 DN2IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 200 GB 120 DN2 1200V 290A HALF-BRIDGE 2 C67070-A2300-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE = 20 k 1200Gate-emitter voltage VGE

9.9. Size:276K eupec
bsm200ga120dlcs.pdf

Technische Information / technical informationIGBT-ModuleBSM200GA120DLCSIGBT-modules62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstr

9.10. Size:98K eupec
bsm200gal120dn2.pdf

BSM 200 GAL 120 DN2IGBT Power Module Single switch with chopper diode at collector Chopper diode like diode of BSM300GA120DN2 Package with insulated metal base plateType VCE IC Package Ordering CodeBSM 200 GAL 120 DN2 1200V 290A HB 200GAL C67070-A2301-A70Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1200 VCollector-gate voltage VCGRRGE =

9.11. Size:267K eupec
bsm200ga120dlc.pdf

Technische Information / technical informationIGBT-ModuleBSM200GA120DLCIGBT-modulesIGBT-Wechselrichter / IGBT-inverterHchstzulssige Werte / maximum rated valuesKollektor-Emitter-SperrspannungT = 25C V 1200 Vcollector-emitter voltageKollektor-Dauergleichstrom T = 80C I 200 ADC-collector current T = 25C I 370 APeriodischer Kollektor Spitzenstromt = 1 ms, T = 80

9.12. Size:135K eupec
bsm200gar120dn2.pdf

9.13. Size:227K eupec
bsm200ga170dn2 bsm200ga170dn2s.pdf

BSM 200 GA 170 DN2IGBT Power Module Single switch Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 6.8 OhmType VCE IC Package Ordering CodeBSM 200 GA 170 DN2 1700V 290A SINGLE SWITCH 1 C67070-A2705-A67BSM 200 GA 170 DN2 S 1700V 290A SSW SENSE 1 C67070-A2707-A67Maximum RatingsParameter Symbol Values UnitCollector-emitter vo

9.14. Size:124K eupec
bsm200gb60dlc.pdf

Technische Information / Technical InformationIGBT-ModuleBSM 200 GB 60 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannung VCES 600 Vcollector-emitter voltageTc= 50C IC,nom. 200 AKollektor-DauergleichstromDC-collector currentTc= 25C IC 230 APeriodischer Kollektor Spitzenstrom

9.15. Size:119K eupec
bsm200ga170dlc.pdf

Technische Information / Technical InformationIGBT-ModuleBSM 200 GA 170 DLCIGBT-ModulesHchstzulssige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-SperrspannungVCES 1700 Vcollector-emitter voltageTC = 80 C IC,nom. 200 AKollektor-DauergleichstromDC-collector currentTC = 25 C IC 400 APeriodischer Kollektor Spitzens

9.16. Size:170K sino
sm2006nsk.pdf

SM2006NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 20V/10A,DDRDS(ON) = 18m (max.) @ VGS = 4.5VRDS(ON) = 27m (max.) @ VGS = 2.5VSS 100% UIS TestedSG Reliable and RuggedTop View of SOP-8 Lead Free Available (RoHS Compliant)( 5,6,7,8 )D D D DApplications(4)G Power Management in Desktop Computer or DC/DC Converters.S S

9.17. Size:287K sino
sm2001csk.pdf

SM2001CSK Dual Enhancement Mode MOSFET (N- and P-Channel)Features Pin DescriptionD1 N-ChannelD1D2 20V/9.5A, D2 RDS(ON) =14m (max.) @ VGS = 4.5V RDS(ON) =18m (max.) @ VGS = 2.5VS1G1S2 P-ChannelG2 -20V/-6A,Top View of SOP 8 RDS(ON) =45m (max.) @ VGS =-4.5V RDS(ON) =65m (max.) @ VGS =-2.5V(8) (7) (6) (5)D1 D1 D2 D2 100% UIS + Rg Tested Reliable and Rug

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: