SM2004NSD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SM2004NSD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 1.8 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V
|Id|ⓘ - Corriente continua
de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 12.5 nS
Cossⓘ - Capacitancia de salida: 80 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
Encapsulados: SOT89
Búsqueda de reemplazo de SM2004NSD MOSFET
- Selecciónⓘ de transistores por parámetros
SM2004NSD datasheet
..1. Size:241K sino
sm2004nsd.pdf 
SM2004NSD N-Channel Enhancement Mode MOSFET Features Pin Description 20V/7A, RDS(ON)= 22m (max.) @ VGS= 10V S D RDS(ON)= 28m (max.) @ VGS= 4.5V G RDS(ON)= 54m (max.) @ VGS= 2.5V 100% UIS and Rg tested Top View SOT-89 ESD Protection Reliable and Rugged D (2) Lead Free and Green Devices Available (RoHS Compliant) G (1) Applications Switching Regulators. S (3) Sw
9.1. Size:145K 1
bsm200gar120dn2.pdf
BSM 200 GAR 120 DN2 IGBT Power Module Single switch with chopper diode at collector Chopper diode like diode of BSM300GA120DN2 Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 200 GAR 120 DN2 1200V 290A HB 200GAR C67070-A2301-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE =
9.2. Size:244K infineon
bsm200gb120dlc.pdf
Technische Information / technical information IGBT-Module BSM200GB120DLC IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstro
9.3. Size:156K eupec
bsm200gb170dlc.pdf
Technische Information / Technical Information IGBT-Module BSM 200 GB 170 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung Tvj = 25 C VCES 1700 V collector-emitter voltage TC = 80 C IC,nom. 200 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 400 A Periodischer Kollek
9.4. Size:134K eupec
bsm200gd60dlc.pdf
Technische Information / Technical Information IGBT-Module BSM 200 GD 60 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 600 V collector-emitter voltage TC= 45 C IC,nom. 200 A Kollektor-Dauergleichstrom DC-collector current TC= 25 C IC 226 A Periodischer Kollektor Spitzenstrom
9.5. Size:88K eupec
bsm200gb120dlc.pdf
Technische Information / Technical Information IGBT-Module BSM200GB120DLC IGBT-Modules vorl ufige Daten preliminary data H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 1200 V collector-emitter voltage TC = 80 C IC,nom. 200 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 420
9.6. Size:290K eupec
bsm200gal120dlc.pdf
Technische Information / technical information IGBT-Module BSM200GAL120DLC IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Vorl ufige Daten / preliminary data H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emit
9.7. Size:147K eupec
bsm200ga120dn2 bsm200ga120dn2s.pdf
BSM 200 GA 120 DN2 IGBT Power Module Single switch Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 200 GA 120 DN2 1200V 300A SINGLE SWITCH 1 C67076-A2006-A70 BSM 200 GA 120 DN2 S 1200V 300A SSW SENSE 1 C67070-A2006-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collect
9.8. Size:169K eupec
bsm200gb120dn2.pdf
BSM 200 GB 120 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 200 GB 120 DN2 1200V 290A HALF-BRIDGE 2 C67070-A2300-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE = 20 k 1200 Gate-emitter voltage VGE
9.9. Size:276K eupec
bsm200ga120dlcs.pdf
Technische Information / technical information IGBT-Module BSM200GA120DLCS IGBT-modules 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstr
9.10. Size:98K eupec
bsm200gal120dn2.pdf
BSM 200 GAL 120 DN2 IGBT Power Module Single switch with chopper diode at collector Chopper diode like diode of BSM300GA120DN2 Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 200 GAL 120 DN2 1200V 290A HB 200GAL C67070-A2301-A70 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage VCGR RGE =
9.11. Size:267K eupec
bsm200ga120dlc.pdf
Technische Information / technical information IGBT-Module BSM200GA120DLC IGBT-modules IGBT-Wechselrichter / IGBT-inverter H chstzul ssige Werte / maximum rated values Kollektor-Emitter-Sperrspannung T = 25 C V 1200 V collector-emitter voltage Kollektor-Dauergleichstrom T = 80 C I 200 A DC-collector current T = 25 C I 370 A Periodischer Kollektor Spitzenstrom t = 1 ms, T = 80
9.13. Size:227K eupec
bsm200ga170dn2 bsm200ga170dn2s.pdf
BSM 200 GA 170 DN2 IGBT Power Module Single switch Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 6.8 Ohm Type VCE IC Package Ordering Code BSM 200 GA 170 DN2 1700V 290A SINGLE SWITCH 1 C67070-A2705-A67 BSM 200 GA 170 DN2 S 1700V 290A SSW SENSE 1 C67070-A2707-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter vo
9.14. Size:124K eupec
bsm200gb60dlc.pdf
Technische Information / Technical Information IGBT-Module BSM 200 GB 60 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 600 V collector-emitter voltage Tc= 50 C IC,nom. 200 A Kollektor-Dauergleichstrom DC-collector current Tc= 25 C IC 230 A Periodischer Kollektor Spitzenstrom
9.15. Size:119K eupec
bsm200ga170dlc.pdf
Technische Information / Technical Information IGBT-Module BSM 200 GA 170 DLC IGBT-Modules H chstzul ssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung VCES 1700 V collector-emitter voltage TC = 80 C IC,nom. 200 A Kollektor-Dauergleichstrom DC-collector current TC = 25 C IC 400 A Periodischer Kollektor Spitzens
9.16. Size:170K sino
sm2006nsk.pdf
SM2006NSK N-Channel Enhancement Mode MOSFET Features Pin Description D D 20V/10A, D D RDS(ON) = 18m (max.) @ VGS = 4.5V RDS(ON) = 27m (max.) @ VGS = 2.5V S S 100% UIS Tested S G Reliable and Rugged Top View of SOP-8 Lead Free Available (RoHS Compliant) ( 5,6,7,8 ) D D D D Applications (4) G Power Management in Desktop Computer or DC/DC Converters. S S
9.17. Size:287K sino
sm2001csk.pdf
SM2001CSK Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description D1 N-Channel D1 D2 20V/9.5A, D2 RDS(ON) =14m (max.) @ VGS = 4.5V RDS(ON) =18m (max.) @ VGS = 2.5V S1 G1 S2 P-Channel G2 -20V/-6A, Top View of SOP 8 RDS(ON) =45m (max.) @ VGS =-4.5V RDS(ON) =65m (max.) @ VGS =-2.5V (8) (7) (6) (5) D1 D1 D2 D2 100% UIS + Rg Tested Reliable and Rug
Otros transistores... SM7A24NSF, SM7A24NSFP, SM7A24NSU, SM7A24NSUB, SM7A25NSF, SM7A25NSFP, SM7A25NSU, SM7A25NSUB, TK10A60D, SM2006NSK, SM2014NSKP, SM2014NSU, SM2030NSU, SM2054NSD, SM2054NSV, SM2201NSQG, SM2202NSQE
