SM4838NSK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM4838NSK
   Código: SM4838
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 3.1 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 10 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 5.3 nC
   Tiempo de subida (tr): 10 nS
   Conductancia de drenaje-sustrato (Cd): 90 pF
   Resistencia entre drenaje y fuente RDS(on): 0.016 Ohm
   Paquete / Cubierta: SOP8

Búsqueda de reemplazo de MOSFET SM4838NSK

SM4838NSK Datasheet (PDF)

..1. Size:239K sino
sm4838nsk.pdf

SM4838NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 30V/10A,DD RDS(ON)= 16m (max.) @ VGS= 10V RDS(ON)= 22m (max.) @ VGS= 4.5VS 100% UIS + Rg TestedSSG Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available (RoHS Compliant)( 5,6,7,8 )D D D DApplications(4)G Power Management in Notebook Computer,Portable Eq

9.1. Size:179K taiwansemi
tsm4835cs.pdf

Preliminary TSM4835 30V P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 3. Source 18 @ VGS = -10V -9.6 4. Gate -30 30 @ VGS = -4.5V -7.5 5, 6, 7, 8. Drain Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switche

9.2. Size:263K sino
sm4839nsk.pdf

SM4839NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 30V/12A,DD RDS(ON)= 11.5m (max.) @ VGS= 10V RDS(ON)= 15.5m (max.) @ VGS= 4.5VS Reliable and RuggedSSG Lead Free and Green Devices AvailableTop View of SOP-8 (RoHS Compliant)( 5,6,7,8 )D D D DApplications(4) Power Management in Notebook Computer,GPortable Equipment and Battery

9.3. Size:264K sino
sm4836nsk.pdf

SM4836NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 30V/20A,DD RDS(ON)= 5.9m (max.) @ VGS= 10V RDS(ON)= 7.9m (max.) @ VGS= 4.5VSS Reliable and RuggedSG Lead Free and Green Devices AvailableTop View of SOP-8 (RoHS Compliant)( 5,6,7,8 )D D D D(4)ApplicationsG Power Management in Notebook Computer, Portable Equipment and Battery

9.4. Size:261K sino
sm4833nsk.pdf

SM4833NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 30V/17A,DD RDS(ON)= 4m (max.) @ VGS= 10V RDS(ON)= 5.6m (max.) @ VGS= 4.5VS Super High Dense Cell DesignSSG Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available (RoHS Compliant)( 5,6,7,8 )D D D D(4)ApplicationsG Power Management in Notebook Computer, Po

9.5. Size:268K sino
sm4831nak.pdf

SM4831NAKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 30V/16.2A,DD RDS(ON)= 7.8m (max.) @ VGS= 10V RDS(ON)= 10.4m (max.) @ VGS= 4.5VS Reliable and RuggedSSG Lead Free and Green Devices AvailableTop View of SOP-8 (RoHS Compliant) 100% UIS Tested( 5,6,7,8 )D D D D(4)ApplicationsG Power Management in Notebook Computer,Portable Eq

9.6. Size:264K sino
sm4834nsk.pdf

SM4834NSK N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 30V/12A, DRDS(ON)= 14.5m (Max.) @ VGS=10V RDS(ON)= 21m (Max.) @ VGS=4.5V SSS Reliable and RuggedG Lead Free and Green Devices Available Top View of SOP-8(RoHS Compliant)(5,6,7,8)D D DDApplications(4) G Power Management in Notebook Computer,Portable Equipment and Battery PoweredSy

9.7. Size:263K sino
sm4832nsk.pdf

SM4832NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 30V/13A,DD RDS(ON)= 9m (max.) @ VGS= 10V RDS(ON)= 13.5m (max.) @ VGS= 4.5VS Reliable and RuggedSSG Lead Free and Green Devices AvailableTop View of SOP-8 (RoHS Compliant)( 5,6,7,8 )D D D D(4)ApplicationsG Power Management in Notebook Computer, Portable Equipment and Battery P

9.8. Size:155K silicon standard
ssm4835m.pdf

SSM4835MP-CHANNEL ENHANCEMENT MODEPOWER MOSFETSimple drive requirement BVDSS -30VDDLow on-resistance D RDS(ON) 20mDFast switching ID -8AGSSSO-8SDescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistance and cost-effectiveness.SThe SO-8 package is widely p

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