SM2302NSA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SM2302NSA
Código: A02*
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.4 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.5 V
Carga de la puerta (Qg): 12 nC
Tiempo de subida (tr): 9 nS
Conductancia de drenaje-sustrato (Cd): 135 pF
Resistencia entre drenaje y fuente RDS(on): 0.026 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET SM2302NSA
SM2302NSA Datasheet (PDF)
sm2302nsa.pdf
SM2302NSAN-Channel Enhancement Mode MOSFETFeatures Pin Description 20V/6A,DRDS(ON)= 26m (max.) @ VGS=4.5VSRDS(ON)= 37m (max.) @ VGS=2.5VG ESD Protected Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications Power Management in Notebook Computer,Portable Equipment and Battery PoweredSSystems.N-Chan
tsm2302 a07.pdf
TSM2302 20V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2. Source 65 @ VGS = 4.5V 2.8 3. Drain 20 95 @ VGS = 2.5V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No.
tsm2302cx.pdf
TSM2302 20V N-Channel MOSFET SOT-23 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 65 @ VGS = 4.5V 2.8 20 95 @ VGS = 2.5V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No.
gsm2302as.pdf
20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2302AS, N-Channel enhancement mode 20V/2.4A,RDS(ON)=90m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/2.0A,RDS(ON)=110m@VGS=2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exceptional on-
gsm2302s.pdf
GSM2302S GSM2302S 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2302S, N-Channel enhancement mode 20V/3.6A,RDS(ON)=85m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A,RDS(ON)=100m@VGS=2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for
ssm2302gn.pdf
SSM2302NN-CHANNEL ENHANCEMENT-MODE POWER MOSFETCapable of 2.5V gate drive BVDSS 20VSmall package outline RDS(ON) 85mDSurface-mount package ID 2.8ASSOT-23GDescriptionPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,Dlow on-resistance and cost-effectiveness.GSAbsolute Maximum RatingsSymbol Parameter Rating Uni
jsm2302.pdf
JSM2302/Features 1 2 /Applications DC-DC /Absolute maximum ratings(Ta=25) /Parameter / Symbol /Value /Unit -/Drain-Source Voltage V 20 V DS-/Gate-Source Voltage V 12 V GS/C
sm2302.pdf
SM2302N-Channel Enhancement-Mode MOSFET(20V, 2.8A)Pb PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 60 @ VGS = 4.5V, ID=2.8A 20V 2.8A 115 @ VGS = 2.5V, ID=2.0A 130 @ VGS = 1.8V, ID=2.0A Features 1 Advanced Trench Process Technology. 2 High Density Cell Design for Ultra Low On-Resistance. 3 Fully Characterized Avalanche Voltage and Current. 4 Improved Shoot
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