SM2302NSA Todos los transistores

 ..1. Size:257K  sino
 sm2302nsa.pdf

SM2302NSA N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A, D RDS(ON)= 26m (max.) @ VGS=4.5V S RDS(ON)= 37m (max.) @ VGS=2.5V G ESD Protected Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices Available D (RoHS Compliant) G Applications Power Management in Notebook Computer, Portable Equipment and Battery Powered S Systems. N-Chan

 8.1. Size:346K  taiwansemi
 tsm2302 a07.pdf

TSM2302 20V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition VDS (V) RDS(on)(m ) ID (A) 1. Gate 2. Source 65 @ VGS = 4.5V 2.8 3. Drain 20 95 @ VGS = 2.5V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No.

 8.2. Size:315K  taiwansemi
 tsm2302cx.pdf

TSM2302 20V N-Channel MOSFET SOT-23 Pin Definition PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Drain 65 @ VGS = 4.5V 2.8 20 95 @ VGS = 2.5V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No.

 8.3. Size:1242K  globaltech semi
 gsm2302as.pdf

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2302AS, N-Channel enhancement mode 20V/2.4A,RDS(ON)=90m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/2.0A,RDS(ON)=110m @VGS=2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exceptional on-

 8.4. Size:448K  globaltech semi
 gsm2302s.pdf

GSM2302S GSM2302S 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2302S, N-Channel enhancement mode 20V/3.6A,RDS(ON)=85m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A,RDS(ON)=100m @VGS=2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 8.5. Size:142K  silicon standard
 ssm2302gn.pdf

SSM2302N N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Small package outline RDS(ON) 85m D Surface-mount package ID 2.8A S SOT-23 G Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, D low on-resistance and cost-effectiveness. G S Absolute Maximum Ratings Symbol Parameter Rating Uni

 8.6. Size:397K  jsmsemi
 jsm2302.pdf

JSM2302 /Features 1 2 /Applications DC-DC /Absolute maximum ratings(Ta=25 ) /Parameter / Symbol /Value /Unit - /Drain-Source Voltage V 20 V DS - /Gate-Source Voltage V 12 V GS /C

 8.7. Size:3108K  cn sps
 sm2302.pdf

SM2302 N-Channel Enhancement-Mode MOSFET(20V, 2.8A) Pb PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 60 @ VGS = 4.5V, ID=2.8A 20V 2.8A 115 @ VGS = 2.5V, ID=2.0A 130 @ VGS = 1.8V, ID=2.0A Features 1 Advanced Trench Process Technology. 2 High Density Cell Design for Ultra Low On-Resistance. 3 Fully Characterized Avalanche Voltage and Current. 4 Improved Shoot