SM2312NSA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SM2312NSA
Código: A12*
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 3.5 nC
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 27 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.072 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET SM2312NSA
SM2312NSA Datasheet (PDF)
sm2312nsa.pdf
SM2312NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/3A,D RDS(ON)=72m (max.) @ VGS=10VS RDS(ON)=100m (max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-3(RoHS Compliant)DApplicationsG DC-DC Conversion. Load Switch for PC fields.S Load Switch for Portables.N-Channel MOSFETOrdering and Marki
sm2312nsa.pdf
SM2312NSAwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)
tsm2312cx.pdf
TSM2312 20V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2. Source 33 @ VGS = 4.5V 4.9 3. Drain 20 40 @ VGS = 2.5V 4.4 51 @ VGS = 1.8V 3.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering In
gsm2312.pdf
20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2312, N-Channel enhancement mode 20V/4.0A,RDS(ON)=36m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A,RDS(ON)=40m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=52m@VGS=1.8V These devices are particularly suited for low Super high density cell design for e
gsm2312a.pdf
20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2312A, N-Channel enhancement mode 20V/2.8A,RDS(ON)=45m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/2.2A,RDS(ON)=48m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=64m@VGS=1.8V These devices are particularly suited for low Super high density cell design for
ssm2312gn.pdf
SSM2312GNN-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS 20VDSimple drive requirement R 50mDS(ON)Fast switching ID 4.3AGPb-free; RoHS compliant.SDESCRIPTIONDThe SSM2312GN is in a SOT-23-3 package, which is widely used for lowerpower commercial and industrial surface mount applications. This device is Ssuitable for low-voltage applications such as DC
sm2312srl.pdf
SM2312SRL20V /6A Single N Power MOSFET B N02B N 20V /6A Single N Power MOSFET 6N02BGeneral Description 20 VV DS20V /6A Single N Power MOSFET 18.9 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 42.0 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 6 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg TestedSM231
tsm2312cx.pdf
TSM2312CXwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC
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