IRF737LC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF737LC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 74 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 17(max) nC
   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
   Paquete / Cubierta: TO220AB

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IRF737LC Datasheet (PDF)

..1. Size:248K international rectifier
irf737lcpbf.pdf

PD - 95947IRF737LCPbF Lead-Free12/20/04Document Number: 91050 www.vishay.com1IRF737LCPbFDocument Number: 91050 www.vishay.com2IRF737LCPbFDocument Number: 91050 www.vishay.com3IRF737LCPbFDocument Number: 91050 www.vishay.com4IRF737LCPbFDocument Number: 91050 www.vishay.com5IRF737LCPbFDocument Number: 91050 www.vishay.com6IRF737LCPbFDocument Nu

..2. Size:145K international rectifier
irf737lc.pdf

PD - 9.1314PRELIMINARY IRF737LCHEXFET Power MOSFETReduced Gate Drive RequirementEnhanced 30V VGS RatingVDSS = 300VReduced CISS, COSS, CRSSExtremely High Frequency OperationRDS(on) = 0.75Repetitive Avalanche RatedDescription ID = 6.1AThis new series of Low Charge HEXFETs achievesignificantly lower gate charge over conventional MOSFETs.Utilizing the new LCDMOS techn

..3. Size:113K vishay
irf737lcpbf.pdf

IRF737LC, SiHF737LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Reduced Gate Drive RequirementVDS (V) 300 Enhanced 30 V VGS RatingAvailableRDS(on) ()VGS = 10 V 0.75 Reduced Ciss, Coss, CrssRoHS*Qg (Max.) (nC) 17 COMPLIANT Extremely High Frequency OperationQgs (nC) 4.8 Repetitive Avalanche Rated Lead (Pb)-free AvailableQgd (nC) 7.6Con

8.1. Size:349K 1
auirf7379q.pdf

AUTOMOTIVE GRADE AUIRF7379Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1 Low On-Resistance VDSS 30V -30V 2 7G1 D1 Logic Level Gate Drive RDS(on) typ. 0.038 0.0703 6S2 D2 Dual N and P Channel MOSFET max. 0.045 0.09045G2 D2 Surface Mount P-CHANNEL MOSFETID 5.8A -4.3A Available in

8.2. Size:245K international rectifier
irf7379qpbf.pdf

PD - 96111IRF7379QPbFHEXFET Power MOSFETl Advanced Process TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8l Ultra Low On-ResistanceS1 D1l Dual N and P Channel MOSFET2 7G1 D1l Surface MountVDSS 30V -30V3 6S2 D2l Available in Tape & Reell 150C Operating Temperature 45G2 D2P-CHANNEL MOSFETl Automotive [Q101] QualifiedRDS(on) 0.045 0.090l Lead-FreeTo

8.3. Size:215K international rectifier
irf7379.pdf

PD - 91625IRF7379HEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8 Ultra Low On-Resistance S1 D12 7 Complimentary Half BridgeG1 D1VDSS 30V -30V Surface Mount3 6S2 D2 Fully Avalanche Rated45G2 D2P-CHANNEL MOSFETRDS(on) 0.045 0.090Top ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced p

8.4. Size:201K international rectifier
irf7379ipbf.pdf

PD - 96089IRF7379IPbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8l Ultra Low On-Resistance S1 D1l Complimentary Half Bridge 2 7G1 D1VDSS 30V -30Vl Surface Mount3 6S2 D2l Fully Avalanche Rated45G2 D2l Lead-FreeP-CHANNEL MOSFETRDS(on) 0.045 0.090Top ViewDescriptionFifth Generation HEXFETs from International Rectifie

8.5. Size:219K infineon
irf7379pbf.pdf

PD - 95300IRF7379PbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8l Ultra Low On-Resistance S1 D1l Complimentary Half Bridge 2 7G1 D1VDSS 30V -30Vl Surface Mount3 6S2 D2l Fully Avalanche Rated45G2 D2l Lead-FreeP-CHANNEL MOSFETRDS(on) 0.045 0.090Top ViewDescriptionFifth Generation HEXFETs from International Rectifier

8.6. Size:349K infineon
auirf7379q.pdf

8.7. Size:1949K cn vbsemi
irf7379tr.pdf

IRF7379TRwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VG

Otros transistores... IRF731 , IRF732 , IRF7321D2 , IRF7322D1 , IRF7324D1 , IRF733 , IRF734 , IRF7353D1 , 10N60 , IRF740 , IRF7401 , IRF7403 , IRF7404 , IRF7406 , IRF740A , IRF740AL , IRF740AS .

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