IRF737LC Todos los transistores

PD - 95947 IRF737LCPbF Lead-Free 12/20/04 Document Number 91050 www.vishay.com 1 IRF737LCPbF Document Number 91050 www.vishay.com 2 IRF737LCPbF Document Number 91050 www.vishay.com 3 IRF737LCPbF Document Number 91050 www.vishay.com 4 IRF737LCPbF Document Number 91050 www.vishay.com 5 IRF737LCPbF Document Number 91050 www.vishay.com 6 IRF737LCPbF Document Nu

PD - 9.1314 PRELIMINARY IRF737LC HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating VDSS = 300V Reduced CISS, COSS, CRSS Extremely High Frequency Operation RDS(on) = 0.75 Repetitive Avalanche Rated Description ID = 6.1A This new series of Low Charge HEXFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS techn

IRF737LC, SiHF737LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Reduced Gate Drive Requirement VDS (V) 300 Enhanced 30 V VGS Rating Available RDS(on) ( )VGS = 10 V 0.75 Reduced Ciss, Coss, Crss RoHS* Qg (Max.) (nC) 17 COMPLIANT Extremely High Frequency Operation Qgs (nC) 4.8 Repetitive Avalanche Rated Lead (Pb)-free Available Qgd (nC) 7.6 Con

AUTOMOTIVE GRADE AUIRF7379Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8 S1 D1 Low On-Resistance VDSS 30V -30V 2 7 G1 D1 Logic Level Gate Drive RDS(on) typ. 0.038 0.070 3 6 S2 D2 Dual N and P Channel MOSFET max. 0.045 0.090 4 5 G2 D2 Surface Mount P-CHANNEL MOSFET ID 5.8A -4.3A Available in

PD - 96111 IRF7379QPbF HEXFET Power MOSFET l Advanced Process Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 l Ultra Low On-Resistance S1 D1 l Dual N and P Channel MOSFET 2 7 G1 D1 l Surface Mount VDSS 30V -30V 3 6 S2 D2 l Available in Tape & Reel l 150 C Operating Temperature 4 5 G2 D2 P-CHANNEL MOSFET l Automotive [Q101] Qualified RDS(on) 0.045 0.090 l Lead-Free To

PD - 91625 IRF7379 HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 2 7 Complimentary Half Bridge G1 D1 VDSS 30V -30V Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-CHANNEL MOSFET RDS(on) 0.045 0.090 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced p

PD - 95300 IRF7379PbF HEXFET Power MOSFET l Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 l Ultra Low On-Resistance S1 D1 l Complimentary Half Bridge 2 7 G1 D1 VDSS 30V -30V l Surface Mount 3 6 S2 D2 l Fully Avalanche Rated 4 5 G2 D2 l Lead-Free P-CHANNEL MOSFET RDS(on) 0.045 0.090 Top View Description Fifth Generation HEXFETs from International Rectifier

PD - 96089 IRF7379IPbF HEXFET Power MOSFET l Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 l Ultra Low On-Resistance S1 D1 l Complimentary Half Bridge 2 7 G1 D1 VDSS 30V -30V l Surface Mount 3 6 S2 D2 l Fully Avalanche Rated 4 5 G2 D2 l Lead-Free P-CHANNEL MOSFET RDS(on) 0.045 0.090 Top View Description Fifth Generation HEXFETs from International Rectifie

AUTOMOTIVE GRADE AUIRF7379Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8 S1 D1 Low On-Resistance VDSS 30V -30V 2 7 G1 D1 Logic Level Gate Drive RDS(on) typ. 0.038 0.070 3 6 S2 D2 Dual N and P Channel MOSFET max. 0.045 0.090 4 5 G2 D2 Surface Mount P-CHANNEL MOSFET ID 5.8A -4.3A Available in

IRF7379TR www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at VG