IRF737LC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 95947IRF737LCPbF Lead-Free12/20/04Document Number: 91050 www.vishay.com1IRF737LCPbFDocument Number: 91050 www.vishay.com2IRF737LCPbFDocument Number: 91050 www.vishay.com3IRF737LCPbFDocument Number: 91050 www.vishay.com4IRF737LCPbFDocument Number: 91050 www.vishay.com5IRF737LCPbFDocument Number: 91050 www.vishay.com6IRF737LCPbFDocument Nu

PD - 9.1314PRELIMINARY IRF737LCHEXFET Power MOSFETReduced Gate Drive RequirementEnhanced 30V VGS RatingVDSS = 300VReduced CISS, COSS, CRSSExtremely High Frequency OperationRDS(on) = 0.75Repetitive Avalanche RatedDescription ID = 6.1AThis new series of Low Charge HEXFETs achievesignificantly lower gate charge over conventional MOSFETs.Utilizing the new LCDMOS techn

IRF737LC, SiHF737LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Reduced Gate Drive RequirementVDS (V) 300 Enhanced 30 V VGS RatingAvailableRDS(on) ()VGS = 10 V 0.75 Reduced Ciss, Coss, CrssRoHS*Qg (Max.) (nC) 17 COMPLIANT Extremely High Frequency OperationQgs (nC) 4.8 Repetitive Avalanche Rated Lead (Pb)-free AvailableQgd (nC) 7.6Con

AUTOMOTIVE GRADE AUIRF7379Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1 Low On-Resistance VDSS 30V -30V 2 7G1 D1 Logic Level Gate Drive RDS(on) typ. 0.038 0.0703 6S2 D2 Dual N and P Channel MOSFET max. 0.045 0.09045G2 D2 Surface Mount P-CHANNEL MOSFETID 5.8A -4.3A Available in

PD - 96111IRF7379QPbFHEXFET Power MOSFETl Advanced Process TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8l Ultra Low On-ResistanceS1 D1l Dual N and P Channel MOSFET2 7G1 D1l Surface MountVDSS 30V -30V3 6S2 D2l Available in Tape & Reell 150C Operating Temperature 45G2 D2P-CHANNEL MOSFETl Automotive [Q101] QualifiedRDS(on) 0.045 0.090l Lead-FreeTo

PD - 91625IRF7379HEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8 Ultra Low On-Resistance S1 D12 7 Complimentary Half BridgeG1 D1VDSS 30V -30V Surface Mount3 6S2 D2 Fully Avalanche Rated45G2 D2P-CHANNEL MOSFETRDS(on) 0.045 0.090Top ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced p

PD - 95300IRF7379PbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8l Ultra Low On-Resistance S1 D1l Complimentary Half Bridge 2 7G1 D1VDSS 30V -30Vl Surface Mount3 6S2 D2l Fully Avalanche Rated45G2 D2l Lead-FreeP-CHANNEL MOSFETRDS(on) 0.045 0.090Top ViewDescriptionFifth Generation HEXFETs from International Rectifier

PD - 96089IRF7379IPbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFETN-Ch P-Ch1 8l Ultra Low On-Resistance S1 D1l Complimentary Half Bridge 2 7G1 D1VDSS 30V -30Vl Surface Mount3 6S2 D2l Fully Avalanche Rated45G2 D2l Lead-FreeP-CHANNEL MOSFETRDS(on) 0.045 0.090Top ViewDescriptionFifth Generation HEXFETs from International Rectifie

AUTOMOTIVE GRADE AUIRF7379Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1 Low On-Resistance VDSS 30V -30V 2 7G1 D1 Logic Level Gate Drive RDS(on) typ. 0.038 0.0703 6S2 D2 Dual N and P Channel MOSFET max. 0.045 0.09045G2 D2 Surface Mount P-CHANNEL MOSFETID 5.8A -4.3A Available in

IRF7379TRwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VG