SM3113NSU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SM3113NSU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 85 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 590 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm

Encapsulados: TO252

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SM3113NSU datasheet

 ..1. Size:261K  sino
sm3113nsu.pdf pdf_icon

SM3113NSU

SM3113NSU N-Channel Enhancement Mode MOSFET Features Pin Description 30V/85A, D RDS(ON)= 3m (Max.) @ VGS=10V S RDS(ON)= 4.6m (Max.) @ VGS=4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant) D Applications G Power Management in Desktop Computer or DC/DC Converters. S N-Channel MOSFET Ordering and Marking Informati

 0.1. Size:1430K  cn vbsemi
sm3113nsuc.pdf pdf_icon

SM3113NSU

SM3113NSUC www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.002 at VGS = 10 V 100 30 72 nC 0.003 at VGS = 4.5 V 90 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET AB

 9.1. Size:173K  sino
sm3117nsu.pdf pdf_icon

SM3113NSU

SM3117NSU N-Channel Enhancement Mode MOSFET Features Pin Description 30V/50A, D RDS(ON)=7.2m (max.) @ VGS=10V S RDS(ON)=9.8m (max.) @ VGS=4.5V G Provide Excellent Qgd x Rds-on 100% UIS + Rg Tested Top View of TO-252-2 Reliable and Rugged D Lead Free and Green Devices Available (RoHS Compliant) G Applications Power Management in Desktop Computer or S

 9.2. Size:551K  sino
sm3119nau.pdf pdf_icon

SM3113NSU

SM3119NAU N-Channel Enhancement Mode MOSFET Features Pin Description Drain 4 30V/50A, RDS(ON)=10.5m (max.) @ VGS=10V 3 Source 2 RDS(ON)=14.5m (max.) @ VGS=4.5V 1 Gate Super High Dense Cell Design Reliable and Rugged Top View of TO-252-3 Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in Desktop Computer or DC

Otros transistores... SM2314NSA, SM2316NSA, SM2318NSA, SM3024NSF, SM3024NSU, SM3054NSU, SM3106NSF, SM3106NSU, K3569, SM3114NSU, SM3116NAF, SM3116NAFP, SM6018NSU, SM6018NSUB, SM6019NSF, SM6019NSU, SM4034NSKP